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US 7,190,611 B2Granted
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
AssigneeGrandis, Inc.
InventorsPaul P. Nguyen, Yiming Huai
Life of this patent
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AssigneeGrandis, Inc.
InventorsPaul P. Nguyen, Yiming Huai
Estimating the term…
A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
A magnetic element, comprising:
A magnetic memory having a plurality of magnetic cells, at least one magnetic cell including a magnetic element comprising:
A method for forming a magnetic element, the method comprising steps of:
Dependencies are inferred from the claim text.