G11C 11/5657
Using ferroelectric storage elements
Official title: {using ferroelectric storage elements}
G11C11/5657 (Using ferroelectric storage elements) appears on 384 US grants and 359 published applications in this corpus.
Search patents in G11C- Granted patents
- 384
- Published applications
- 359
- Assignees
- 119
- Inventors
- 575
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 1 |
| 2002 | 3 | 5 |
| 2003 | 9 | 8 |
| 2004 | 3 | 10 |
| 2005 | 10 | 8 |
| 2006 | 5 | 6 |
| 2007 | 4 | 1 |
| 2008 | 4 | 3 |
| 2009 | 1 | 5 |
| 2010 | 3 | 2 |
| 2011 | 6 | 4 |
| 2012 | 6 | 4 |
| 2013 | 3 | 2 |
| 2014 | 4 | 6 |
| 2015 | 5 | 8 |
| 2016 | 10 | 8 |
| 2017 | 13 | 16 |
| 2018 | 22 | 18 |
| 2019 | 32 | 34 |
| 2020 | 32 | 36 |
| 2021 | 25 | 29 |
| 2022 | 45 | 35 |
| 2023 | 31 | 30 |
| 2024 | 31 | 33 |
| 2025 | 26 | 20 |
| 2026 | 14 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric nanoparticle capacitor for non-binary logics1 Sep 2026US 12,727,166 B2Terra Quantum AG
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Manufacturing method of conductive probe21 Jul 2026US 12,688,868 B2Resonac Hard Disk Corporation
- Embedded ROM-based multi-bit, multi-kernel, multi-channel weights in individual pixels for in-pixel computing16 Jun 2026US 12,659,630 B2University of Southern California
- Amplitude modulation for writing to a multi-level bit-cell26 May 2026US 12,640,199 B1Kepler Computing Inc.
- Ferroelectric storage apparatus and method of reading information8 Oct 2026US 2026/0311721 A1Resonac Hard Disk Corporation
- Ferroelectric iii-nitride heterojunction devices20 Aug 2026US 2026/0247625 A1The Regents of the University of Michigan
- Cross-coupled differential fefet bit-cell circuit13 Aug 2026US 2026/0239624 A1
- Capacitive synaptic device13 Aug 2026US 2026/0239634 A1Semron GmbH
- Multi-state memory comprising tunnel junctions with topologically stabilized structures13 Aug 2026US 2026/0239893 A1Centre National De La Recherche Scientifique
Most cited
By later US patents
- Semiconductor memory device and various systems mounting them132US 5,903,492 AKabushiki Kaisha Toshiba · 1999
- Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell129US 5,901,089 AAgate Semiconductor, Inc. · 1999
- Non-volatile semiconductor memory allowing user to enter various refresh commands100US 6,240,032 B1Sharp Kabushiki Kaisha · 2001
- Analog ferroelectric memory with improved temperature range95US 9,697,882 B1Radiant Technologies, Inc. · 2017
- Double dense ferroelectric capacitor cell memory92US 5,640,030 AInternational Business Machines Corporation · 1997