Analog ferroelectric memory with improved temperature range

Abstract

A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Qmax. A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Qmax for the ferroelectric capacitor, determines a charge that is a fraction of the measured Qmax to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Qmax to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Qmax for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Qmax.

Dependencies are inferred from the claim text.