G11C 11/5678
Using amorphous/crystalline phase transition storage elements
Official title: {using amorphous/crystalline phase transition storage elements}
G11C11/5678 (Using amorphous/crystalline phase transition storage elements) appears on 1,305 US grants and 1,391 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,305
- Published applications
- 1,391
- Assignees
- 179
- Inventors
- 1,341
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 0 |
| 2002 | 1 | 10 |
| 2003 | 12 | 24 |
| 2004 | 19 | 36 |
| 2005 | 25 | 24 |
| 2006 | 24 | 38 |
| 2007 | 16 | 57 |
| 2008 | 48 | 124 |
| 2009 | 62 | 99 |
| 2010 | 79 | 99 |
| 2011 | 111 | 77 |
| 2012 | 90 | 61 |
| 2013 | 56 | 62 |
| 2014 | 77 | 86 |
| 2015 | 90 | 80 |
| 2016 | 82 | 63 |
| 2017 | 77 | 38 |
| 2018 | 44 | 39 |
| 2019 | 53 | 61 |
| 2020 | 55 | 60 |
| 2021 | 65 | 60 |
| 2022 | 49 | 55 |
| 2023 | 50 | 41 |
| 2024 | 49 | 51 |
| 2025 | 33 | 28 |
| 2026 | 12 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device22 Sep 2026US 12,744,084 B2STMicroelectronics International N. V.
- Lifetime mixed level non-volatile memory system8 Sep 2026US 12,731,638 B2Vervain, LLC
- Techniques for multi-level chalcogenide memory cell programming11 Aug 2026US 12,706,142 B2Micron Technology, Inc.
- Dynamic write selection for shelf-life retention in non-volatile memories16 Jun 2026US 12,658,234 B2Intel Corporation
- Embedded ROM-based multi-bit, multi-kernel, multi-channel weights in individual pixels for in-pixel computing16 Jun 2026US 12,659,630 B2University of Southern California
- Memory device storing data in ternary cells using two levels of coding13 Aug 2026US 2026/0236186 A1Micron Technology, Inc.
- In-memory computation device having an improved programming circuit and programming method13 Aug 2026US 2026/0237452 A1STMicroelectronics International N. V.
- 3d semiconductor device and structure with metal layers and a power delivery path13 Aug 2026US 2026/0239658 A1Monolithic 3D Inc.
- Pulse based multi-level cell programming6 Aug 2026US 2026/0229261 A1Micron Technology, Inc.
- Mechanisms for programming multilevel memory devices with variable memory windows30 Jul 2026US 2026/0221186 A1TetraMem Inc.
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997