G11C 11/5664
Using organic memory material storage elements
Official title: {using organic memory material storage elements}
G11C11/5664 (Using organic memory material storage elements) appears on 168 US grants and 162 published applications in this corpus.
Search patents in G11C- Granted patents
- 168
- Published applications
- 162
- Assignees
- 64
- Inventors
- 306
- Latest grant
- 25 Feb 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 5 | 0 |
| 2002 | 4 | 3 |
| 2003 | 2 | 12 |
| 2004 | 7 | 13 |
| 2005 | 13 | 12 |
| 2006 | 12 | 12 |
| 2007 | 7 | 12 |
| 2008 | 8 | 25 |
| 2009 | 13 | 15 |
| 2010 | 16 | 10 |
| 2011 | 14 | 6 |
| 2012 | 11 | 6 |
| 2013 | 4 | 1 |
| 2014 | 6 | 1 |
| 2015 | 5 | 6 |
| 2016 | 6 | 8 |
| 2017 | 9 | 1 |
| 2018 | 1 | 4 |
| 2019 | 2 | 2 |
| 2020 | 2 | 4 |
| 2021 | 4 | 2 |
| 2022 | 1 | 3 |
| 2023 | 3 | 1 |
| 2024 | 4 | 2 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for information storage based on hybrid material25 Feb 2025US 12,237,012 B2HPSTAR (Beijing)
- Resistive change element arrays24 Dec 2024US 12,176,028 B2Nantero, Inc.
- Nucleic acid-based electrically readable, read-only memory26 Mar 2024US 11,943,940 B2Emory University
- Resistive change element arrays5 Mar 2024US 11,923,003 B2Nantero, Inc.
- Systems and methods for writing and reading data stored in a polymer5 Mar 2024US 11,923,004 B2Iridia, Inc.
- Organic molecular memory25 Sep 2025US 2025/0301851 A1
- Method for information storage based on hybrid material4 Apr 2024US 2024/0112733 A1HPSTAR (Beijing)
- Resistive Change Element Arrays1 Feb 2024US 2024/0038299 A1Nantero, Inc.
- Systems and methods for writing and reading data stored in a polymer29 Jun 2023US 2023/0207001 A1Iridia, Inc.
- Resistive Change Element Arrays12 May 2022US 2022/0148652 A1Nantero, Inc.
Most cited
By later US patents
- Multi-level cell resistance random access memory with metal oxides268US 7,697,316 B2Macronix International Co., Ltd. · 2010
- Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states260US 7,586,778 B2Macronix International Co., Ltd. · 2009
- Read-only memory and read-only memory devices149US 6,236,587 B12001
- Memory device134US 6,768,157 B2Advanced Micro Devices, Inc. · 2004
- Memory device with active and passive layers115US 6,858,481 B2Advanced Micro Devices, Inc. · 2005