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US 11,923,003 B2Granted
Resistive change element arrays
AssigneeNantero, Inc.
InventorsJia Luo, Lee E. Cleveland, Ton Yan Tony Chan
Life of this patent
Estimating the term…
Abstract
Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.
Claims30
A resistive change element array comprising:
- a first plurality of word lines;
- a second plurality of word lines;
- a plurality of bit lines, wherein each bit line in said plurality of bit lines has a segment located below said first plurality of word lines and a segment located above said second plurality of word lines;
- a plurality of electrical communication conductive structures, wherein each electrical communication conductive structure in said plurality of electrical communication conductive structures is in electrical communication with a bit line segment in said bit line segments located below said first plurality of word lines and a bit line segment in said bit line segments located above said second plurality of word lines and provides an electrical communication path between said bit line segment located below said first plurality of word lines and said bit line segment located above said second plurality of word lines;
- a first plurality of resistive change elements, wherein each resistive change element in said first plurality of resistive change elements has a nanotube fabric, wherein each resistive change element in said first plurality of resistive change elements is operable as an antifuse that remains in a high resistive state until adjusted to a low resistive state and a resistance of said low resistive state is less than a resistance of said high resistive state, and wherein each resistive change element in said first plurality of resistive change elements is in electrical communication with a bit line in said plurality of bit lines and a word line in said first plurality of word lines;
- and
- a second plurality of resistive change elements, wherein each resistive change element in said second plurality of resistive change elements has a nanotube fabric, wherein each resistive change element in said second plurality of resistive change elements is operable as an antifuse that remains in a high resistive state until adjusted to a low resistive state and a resistance of said low resistive state is less than a resistance of said high resistive state, and wherein each resistive change element in said second plurality of resistive change elements is in electrical communication with a bit line in said plurality of bit lines and a word line in said second plurality of word lines.
4 more elements
A resistive change element array comprising:
- a first plurality of word lines;
- a second plurality of word lines;
- a plurality of bit lines, wherein each bit line in said plurality of bit lines has a segment located below said first plurality of word lines and a segment located above said second plurality of word lines;
- a plurality of electrical communication conductive structures, wherein said plurality of electrical communication conductive structures is located between said first plurality of word lines and said second plurality of word lines, and wherein each electrical communication conductive structure in said plurality of electrical communication conductive structures is in electrical communication with a bit line segment in said bit line segments located below said first plurality of word lines and a bit line segment in said bit line segments located above said second plurality of word lines and provides an electrical communication path between said bit line segment located below said first plurality of word lines and said bit line segment located above said second plurality of word lines;
- a first plurality of resistive change elements, wherein each resistive change element in said first plurality of resistive change elements is in electrical communication with a bit line in said plurality of bit lines and a word line in said first plurality of word lines, and wherein all resistive change elements in electrical communication with a bit line in said plurality of bit lines and located on a same side of said plurality of electrical communication conductive structures as said first plurality of word lines are located lower than said first plurality of word lines and higher than said bit line segments located below said first plurality of word lines;
- and
- a second plurality of resistive change elements, wherein each resistive change element in said second plurality of resistive change elements is in electrical communication with a bit line in said plurality of bit lines and a word line in said second plurality of word lines.
4 more elements
Dependencies are inferred from the claim text.