G11C 11/5685
Using storage elements comprising metal oxide memory material
Official title: {using storage elements comprising metal oxide memory material, e.g. perovskites}
G11C11/5685 (Using storage elements comprising metal oxide memory material) appears on 619 US grants and 668 published applications in this corpus.
Search patents in G11C- Granted patents
- 619
- Published applications
- 668
- Assignees
- 120
- Inventors
- 852
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 0 |
| 2003 | 3 | 9 |
| 2004 | 13 | 38 |
| 2005 | 23 | 26 |
| 2006 | 25 | 14 |
| 2007 | 12 | 24 |
| 2008 | 19 | 38 |
| 2009 | 23 | 33 |
| 2010 | 22 | 44 |
| 2011 | 39 | 45 |
| 2012 | 43 | 57 |
| 2013 | 56 | 37 |
| 2014 | 41 | 43 |
| 2015 | 53 | 46 |
| 2016 | 44 | 33 |
| 2017 | 43 | 25 |
| 2018 | 28 | 27 |
| 2019 | 25 | 29 |
| 2020 | 24 | 25 |
| 2021 | 23 | 23 |
| 2022 | 18 | 21 |
| 2023 | 23 | 9 |
| 2024 | 9 | 9 |
| 2025 | 7 | 10 |
| 2026 | 2 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Binary neural network hardware apparatus22 Sep 2026US 12,744,081 B2Electronics and Telecommunications Research Institute
- Embedded ROM-based multi-bit, multi-kernel, multi-channel weights in individual pixels for in-pixel computing16 Jun 2026US 12,659,630 B2University of Southern California
- Programmable resistive memory element and a method of making the same7 Oct 2025US 12,437,809 B2Cyberswarm, Inc.
- Memory cell including programmable resistors with transistor components23 Sep 2025US 12,424,279 B2Taiwan Semiconductor Manufacturing Company.Ltd
- CAMs for low latency complex distribution sampling24 Jun 2025US 12,340,842 B2Hewlett Packard Enterprise Development LP
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Multi-level non-volatile resistive device with write-verify algorithm23 Apr 2026US 2026/0112413 A1
- Programmable resistive memory element and a method of making the same8 Jan 2026US 2026/0011367 A1Cyberswarm, Inc.
- Memory cell including programmable resistors with transistor components27 Nov 2025US 2025/0364047 A1Taiwan Semiconductor Manufacturing Company.Ltd
- One-time-programmable memory array having different device characteristics and methods of manufacturing thereof13 Nov 2025US 2025/0351339 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically variable multi-state resistance computing375US 6,473,332 B1University of Houston System · 2002
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states260US 7,586,778 B2Macronix International Co., Ltd. · 2009
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating193US 8,243,499 B2Zeno Semiconductor, Inc. · 2012