G11C 11/5614
Using conductive bridging ram [cbram] or programming metallization cells [pmc]
Official title: {using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]}
G11C11/5614 (Using conductive bridging ram [cbram] or programming metallization cells [pmc]) appears on 202 US grants and 209 published applications in this corpus.
Search patents in G11C- Granted patents
- 202
- Published applications
- 209
- Assignees
- 72
- Inventors
- 346
- Latest grant
- 23 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 1 | 9 |
| 2004 | 2 | 2 |
| 2005 | 5 | 8 |
| 2006 | 5 | 3 |
| 2007 | 3 | 10 |
| 2008 | 11 | 21 |
| 2009 | 10 | 13 |
| 2010 | 9 | 13 |
| 2011 | 14 | 14 |
| 2012 | 10 | 7 |
| 2013 | 9 | 6 |
| 2014 | 6 | 10 |
| 2015 | 19 | 20 |
| 2016 | 23 | 11 |
| 2017 | 16 | 4 |
| 2018 | 6 | 7 |
| 2019 | 10 | 10 |
| 2020 | 7 | 9 |
| 2021 | 13 | 11 |
| 2022 | 5 | 8 |
| 2023 | 8 | 3 |
| 2024 | 7 | 4 |
| 2025 | 3 | 2 |
| 2026 | 0 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Circuit design and layout with high embedded memory density23 Sep 2025US 12,424,256 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-state programming of memory cells29 Jul 2025US 12,374,408 B2Micron Technology, Inc.
- Memory device and programming method thereof21 Jan 2025US 12,205,639 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, memory device manufacturing method and memory device operation method thereof20 Aug 2024US 12,069,857 B2Macronix International Co., Ltd.
- Multi-state programming of memory cells21 May 2024US 11,989,228 B2Micron Technology, Inc.
- Non-volatile memory device and method of fabricating non-volatile memory cell30 Apr 2026US 2026/0122898 A1eMemory Technology Inc.
- Multi-level non-volatile resistive device with write-verify algorithm23 Apr 2026US 2026/0112413 A1
- Circuit design and layout with high embedded memory density15 Jan 2026US 2026/0018199 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function code generating system and generating method17 Jul 2025US 2025/0232066 A1eMemory Technology Inc.
- Memory device and programming method thereof15 May 2025US 2025/0157534 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Programmable structure, an array including the structure, and methods of forming the same155US 7,169,635 B2Axon Technologies Corporation · 2007
- Microelectronic programmable device and methods of forming and programming the same137US 6,635,914 B2Axon Technologies Corporation · 2003
- Apparatus and method for dual cell common electrode PCRAM memory device134US 6,894,304 B2Micron Technology, Inc. · 2005
- Programmable microelectronic device, structure, and system and method of forming the same113US 6,985,378 B2Axon Technologies Corporation · 2006