Back to results
US 6,894,304 B2Granted
Apparatus and method for dual cell common electrode PCRAM memory device
AssigneeMicron Technology, Inc.
InventorJohn Moore
Life of this patent
Estimating the term…
Abstract
Two PCRAM cells which use a common anode between them are disclosed. The two memory cells can be accessed separately to store two bits of data which can be read and written, and can be stacked one over the other with a common anode between them to form an upper and lower cell pair. Respective access transistors are provided for the cells and arranged to permit reading and writing of the cells.
Claims32
A memory device comprising:
- a first memory cell comprising a chalcogenide glass material between a first electrode and a second electrode;
- and
- a second memory cell comprising a chalcogenide glass material between said second and a third electrode;
- wherein said second electrode comprises a first silver layer, a tungsten layer over said first silver layer, and a second silver layer over said tungsten layer.
1 more element
A computer system comprising:
- a processor;
- a memory device electrically coupled to said processor, said memory device comprising:
- a first memory cell comprising a chalcogenide glass material between a first electrode and a second electrode;
- and
- a second memory cell comprising a chalcogenide glass material between said second electrode and a third electrode;
- wherein said second electrode comprises a first silver layer, a tungsten layer over said first silver layer, and a second silver layer over said tungsten layer.
3 more elements
Dependencies are inferred from the claim text.