Non-volatile memory device and method of fabricating non-volatile memory cell

A non-volatile memory device comprising a plurality of non-volatile memory cells, a body oxide layer and a well layer, wherein the well layer is above the body oxide layer and has a doped type of a first type, wherein each of the non-volatile memory cells comprises:

• a first doped region;
• a second doped region;
• a third doped region, comprising a first portion and a second portion, wherein the first doped region, the second doped region and the third doped region are formed within the well layer;
• a select gate structure, formed above the well layer and located between the first doped region and the second doped region;
• and
• a memory gate structure, formed above the well layer and located between the second doped region and the third doped region,
• wherein the first portion of the third doped region has a doped type of the first type, and the first doped region, the second doped region and the second portion of the third doped region have a doped type of a second type, wherein the first type is different from the second type.