G11C 11/4091
Sense or sense/refresh amplifiers, or associated sense circuitry
Official title: Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
G11C11/4091 (Sense or sense/refresh amplifiers, or associated sense circuitry) appears on 3,279 US grants and 3,045 published applications in this corpus.
Search patents in G11C- Granted patents
- 3,279
- Published applications
- 3,045
- Assignees
- 336
- Inventors
- 3,138
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 13 | 0 |
| 1978 | 16 | 0 |
| 1979 | 8 | 0 |
| 1980 | 7 | 0 |
| 1981 | 6 | 0 |
| 1982 | 3 | 0 |
| 1983 | 8 | 0 |
| 1984 | 5 | 0 |
| 1985 | 13 | 0 |
| 1986 | 7 | 0 |
| 1987 | 10 | 0 |
| 1988 | 8 | 0 |
| 1989 | 17 | 0 |
| 1990 | 10 | 0 |
| 1991 | 19 | 0 |
| 1992 | 22 | 0 |
| 1993 | 22 | 0 |
| 1994 | 33 | 0 |
| 1995 | 24 | 0 |
| 1996 | 21 | 0 |
| 1997 | 50 | 0 |
| 1998 | 45 | 0 |
| 1999 | 50 | 0 |
| 2000 | 54 | 0 |
| 2001 | 61 | 22 |
| 2002 | 73 | 66 |
| 2003 | 55 | 52 |
| 2004 | 50 | 56 |
| 2005 | 45 | 59 |
| 2006 | 57 | 67 |
| 2007 | 56 | 87 |
| 2008 | 59 | 103 |
| 2009 | 80 | 86 |
| 2010 | 82 | 73 |
| 2011 | 69 | 82 |
| 2012 | 71 | 70 |
| 2013 | 69 | 71 |
| 2014 | 70 | 77 |
| 2015 | 96 | 110 |
| 2016 | 109 | 94 |
| 2017 | 125 | 127 |
| 2018 | 145 | 138 |
| 2019 | 161 | 177 |
| 2020 | 212 | 195 |
| 2021 | 201 | 192 |
| 2022 | 173 | 236 |
| 2023 | 174 | 238 |
| 2024 | 216 | 191 |
| 2025 | 155 | 186 |
| 2026 | 132 | 190 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatuses and methods for compute enabled cache6 Oct 2026US 12,754,849 B2
- Sense amplifiers and operation methods thereof, and memory devices including the same6 Oct 2026US 12,755,764 B2Samsung Electronics Co., Ltd.
- Semiconductor device having row decoder circuit6 Oct 2026US 12,755,774 B2Micron Technology, Inc.
- Memory device for controlling shielding bit lines6 Oct 2026US 12,755,776 B2Samsung Electronics Co., Ltd.
- Apparatuses and methods for simultaneous in data path compute operations22 Sep 2026US 12,743,206 B2
- Semiconductor memory devices with wordline groups8 Oct 2026US 2026/0311741 A1Samsung Electronics Co., Ltd.
- Peripheral circuit and memory device including the same8 Oct 2026US 2026/0311743 A1Samsung Electronics Co., Ltd.
- Memory device including bit line sense amplifier and operating method thereof8 Oct 2026US 2026/0311744 A1Samsung Electronics Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory device and method of operation thereof8 Oct 2026US 2026/0311746 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Hierarchical DRAM array with grouped I/O lines and high speed sensing circuit467US 5,638,317 ATexas Instruments Incorporated · 1997
- Dynamic memory with isolated digit lines445US 5,506,811 AMicron Technology, Inc. · 1996
- DRAM sense amplifier having pre-charged transistor body nodes444US 6,466,499 B1Micron Technology, Inc. · 2002
- Datapath architecture for high area efficiency428US 7,054,178 B1Etron Technology, Inc. · 2006
- Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same426US 7,957,206 B2Micron Technology, Inc. · 2011