G11C 11/409
Read-write [r-w] circuits
Official title: Read-write [R-W] circuits
G11C11/409 (Read-write [r-w] circuits) appears on 9,838 US grants and 9,041 published applications in this corpus.
Search patents in G11C- Granted patents
- 9,838
- Published applications
- 9,041
- Assignees
- 722
- Inventors
- 8,026
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 24 | 0 |
| 1977 | 27 | 0 |
| 1978 | 27 | 0 |
| 1979 | 19 | 0 |
| 1980 | 20 | 0 |
| 1981 | 18 | 0 |
| 1982 | 18 | 0 |
| 1983 | 28 | 0 |
| 1984 | 19 | 0 |
| 1985 | 24 | 0 |
| 1986 | 32 | 0 |
| 1987 | 45 | 0 |
| 1988 | 37 | 0 |
| 1989 | 39 | 0 |
| 1990 | 51 | 0 |
| 1991 | 48 | 0 |
| 1992 | 44 | 0 |
| 1993 | 61 | 0 |
| 1994 | 95 | 0 |
| 1995 | 57 | 0 |
| 1996 | 67 | 0 |
| 1997 | 110 | 0 |
| 1998 | 132 | 0 |
| 1999 | 137 | 0 |
| 2000 | 163 | 0 |
| 2001 | 177 | 75 |
| 2002 | 217 | 231 |
| 2003 | 205 | 205 |
| 2004 | 194 | 215 |
| 2005 | 174 | 234 |
| 2006 | 193 | 231 |
| 2007 | 209 | 313 |
| 2008 | 224 | 287 |
| 2009 | 229 | 238 |
| 2010 | 231 | 205 |
| 2011 | 204 | 202 |
| 2012 | 193 | 220 |
| 2013 | 213 | 218 |
| 2014 | 247 | 231 |
| 2015 | 292 | 314 |
| 2016 | 343 | 270 |
| 2017 | 372 | 354 |
| 2018 | 362 | 352 |
| 2019 | 470 | 508 |
| 2020 | 553 | 548 |
| 2021 | 615 | 648 |
| 2022 | 543 | 677 |
| 2023 | 557 | 720 |
| 2024 | 603 | 613 |
| 2025 | 538 | 528 |
| 2026 | 338 | 404 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 11/4096Input/output [i/o] data management or control circuits3,390
- G11C 11/4091Sense or sense/refresh amplifiers, or associated sense circuitry3,279
- G11C 11/4093Input/output [i/o] data interface arrangements2,641
- G11C 11/4094Bit-line management or control circuits2,206
- G11C 11/4097Bit-line organisation1,854
- G11C 11/4099Dummy cell treatment570
Recent patents
- Apparatuses and methods for compute enabled cache6 Oct 2026US 12,754,849 B2
- Sense amplifiers and operation methods thereof, and memory devices including the same6 Oct 2026US 12,755,764 B2Samsung Electronics Co., Ltd.
- Automatic adaptive signaling over a pin of an integrated circuit device6 Oct 2026US 12,755,767 B2Micron Technology, Inc.
- Memory device6 Oct 2026US 12,755,773 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having row decoder circuit6 Oct 2026US 12,755,774 B2Micron Technology, Inc.
- Memory devices with multiple pseudo-channels8 Oct 2026US 2026/0310615 A1Micron Technology, Inc.
- Semiconductor memory devices with wordline groups8 Oct 2026US 2026/0311741 A1Samsung Electronics Co., Ltd.
- Memory device and memory module including the same8 Oct 2026US 2026/0311742 A1Samsung Electronics Co., Ltd.
- Peripheral circuit and memory device including the same8 Oct 2026US 2026/0311743 A1Samsung Electronics Co., Ltd.
- Memory device including bit line sense amplifier and operating method thereof8 Oct 2026US 2026/0311744 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Hierarchical DRAM array with grouped I/O lines and high speed sensing circuit467US 5,638,317 ATexas Instruments Incorporated · 1997
- Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines462US 6,166,942 AMicron Technology, Inc. · 2000
- DRAM having bidirectional global bit lines453US 5,367,488 AGoldstar Electron Co., Ltd. · 1994
- Dynamic memory with isolated digit lines445US 5,506,811 AMicron Technology, Inc. · 1996
- DRAM sense amplifier having pre-charged transistor body nodes444US 6,466,499 B1Micron Technology, Inc. · 2002