G11C 11/407
For memory cells of the field-effect type
Official title: for memory cells of the field-effect type
G11C11/407 (For memory cells of the field-effect type) appears on 14,995 US grants and 13,635 published applications in this corpus.
Search patents in G11C- Granted patents
- 14,995
- Published applications
- 13,635
- Assignees
- 954
- Inventors
- 11,071
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 32 | 0 |
| 1977 | 37 | 0 |
| 1978 | 39 | 0 |
| 1979 | 28 | 0 |
| 1980 | 31 | 0 |
| 1981 | 32 | 0 |
| 1982 | 31 | 0 |
| 1983 | 36 | 0 |
| 1984 | 37 | 0 |
| 1985 | 39 | 0 |
| 1986 | 48 | 0 |
| 1987 | 57 | 0 |
| 1988 | 48 | 0 |
| 1989 | 58 | 0 |
| 1990 | 68 | 0 |
| 1991 | 74 | 0 |
| 1992 | 69 | 0 |
| 1993 | 91 | 0 |
| 1994 | 147 | 0 |
| 1995 | 96 | 0 |
| 1996 | 97 | 0 |
| 1997 | 172 | 0 |
| 1998 | 218 | 0 |
| 1999 | 229 | 0 |
| 2000 | 277 | 0 |
| 2001 | 304 | 150 |
| 2002 | 367 | 365 |
| 2003 | 352 | 389 |
| 2004 | 334 | 361 |
| 2005 | 300 | 407 |
| 2006 | 353 | 416 |
| 2007 | 357 | 457 |
| 2008 | 356 | 454 |
| 2009 | 356 | 386 |
| 2010 | 387 | 342 |
| 2011 | 335 | 309 |
| 2012 | 304 | 337 |
| 2013 | 316 | 320 |
| 2014 | 391 | 410 |
| 2015 | 444 | 470 |
| 2016 | 520 | 392 |
| 2017 | 531 | 489 |
| 2018 | 488 | 492 |
| 2019 | 681 | 755 |
| 2020 | 814 | 821 |
| 2021 | 873 | 927 |
| 2022 | 800 | 969 |
| 2023 | 810 | 1027 |
| 2024 | 877 | 869 |
| 2025 | 777 | 748 |
| 2026 | 477 | 573 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 11/409Read-write [r-w] circuits9,838
- G11C 11/4076Timing circuits4,236
- G11C 11/408Address circuits4,132
- G11C 11/4074Power supply or voltage generation circuits3,088
- G11C 11/4072Circuits for initialization, powering up or down, clearing memory or presetting742
- G11C 11/4078Safety or protection circuits366
Recent patents
- Apparatuses and methods for compute enabled cache6 Oct 2026US 12,754,849 B2
- Sense amplifiers and operation methods thereof, and memory devices including the same6 Oct 2026US 12,755,764 B2Samsung Electronics Co., Ltd.
- Automatic adaptive signaling over a pin of an integrated circuit device6 Oct 2026US 12,755,767 B2Micron Technology, Inc.
- Methods and circuits for power management of a memory module6 Oct 2026US 12,755,772 B2Rambus Inc.
- Memory device6 Oct 2026US 12,755,773 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices with multiple pseudo-channels8 Oct 2026US 2026/0310615 A1Micron Technology, Inc.
- Hbm power up protection scheme design8 Oct 2026US 2026/0311738 A1Micron Technology, Inc.
- Detection and mitigation of attacks on row hammer mitigation circuits8 Oct 2026US 2026/0311739 A1Micron Technology, Inc.
- Memory that determines last programmed word line, storage device and operating method of the memory8 Oct 2026US 2026/0311740 A1SK hynix Inc.
- Semiconductor memory devices with wordline groups8 Oct 2026US 2026/0311741 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Hierarchical DRAM array with grouped I/O lines and high speed sensing circuit467US 5,638,317 ATexas Instruments Incorporated · 1997
- Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines462US 6,166,942 AMicron Technology, Inc. · 2000
- DRAM having bidirectional global bit lines453US 5,367,488 AGoldstar Electron Co., Ltd. · 1994
- Dynamic semiconductor memory device447US 6,151,244 AMitsubishi Denki Kabushiki Kaisha · 2000
- Dynamic memory with isolated digit lines445US 5,506,811 AMicron Technology, Inc. · 1996