Memory that determines last programmed word line, storage device and operating method of the memory
AssigneeSK hynix Inc.
InventorGun Soo LEE
Life of this patent
Estimating the term…
Abstract
The memory includes N number of word lines, M number of bit lines, memory cells each corresponding to one of the N number of word lines and one of the M number of bit lines, and a control logic determining a target word line, among the N number of word lines, based on a voltage of a target bit line while a first word line voltage or a second word line voltage is applied to each of the N number of word lines.
Claims19
A memory comprising:
- an N number of word lines;
- an M number of bit lines;
- a plurality of memory cells respectively corresponding to one of the N number of word lines and one of the M number of bit lines;
- and
- a control logic determining a target word line, wherein the target word line is a word line programmed last from among the N number of word lines,
- wherein the control logic determines the target word line based on a voltage of a target bit line when a first word line voltage or a second word line voltage is applied to each of the N number of word lines,
- and
- wherein each of N and M is a natural number equal to or greater than 2.
A storage device comprising:
- a memory comprising N number of word lines, M number of bit lines, and a plurality of memory cells respectively corresponding to one of the N number of word lines and one of the M number of bit lines, the memory determining a target word line, wherein the target word line is a word line programmed last from among the N number of word lines;
- and
- a controller for transmitting a command requesting information about the target word line to the memory,
- wherein the memory:
- determines the target word line based on a voltage of a target bit line when a first word line voltage or a second word line voltage is applied to each of the N number of word lines;
- and
- transmits a parameter indicating the information about the target word line to the controller in response to the command, and
- wherein each of N and M is a natural number equal to or greater than 2.
A method of operating a memory comprising N number of word lines, M number of bit lines, and a plurality of memory cells respectively corresponding to one of the N number of word lines and one of the M number of bit lines, the method comprising:
- applying a first word line voltage or a second word line voltage to each of the N number of word lines;
- determining a voltage of a target bit line among the M number of bit lines;
- and
- determining a target word line, wherein the target word line is a word line programmed last from among the N number of word lines, based on the voltage of the target bit line,
- wherein each N and M is a natural number equal to or greater than 2.
Dependencies are inferred from the claim text.