Memory device and method of operation thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsChangyoung Lee, Young Seok Park, Changsik Yoo, Younghun Seo, Kyu-Chang Kang
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsChangyoung Lee, Young Seok Park, Changsik Yoo, Younghun Seo, Kyu-Chang Kang
Estimating the term…
Provided is a memory device including a first sense amplification circuit connected to a first input and output line pair, a pre-charge circuit connected to a second input and output line pair, and a first switch circuit, wherein the pre-charge circuit is configured to pre-charge the second input and output line pair at a pre-charge voltage after the first switch circuit disconnects the first input and output line pair from the second input and output line pair, and wherein the first switch circuit is configured to connect the first input and output line pair and the second input and output line pair to deliver a voltage of the first input and output line pair, which is amplified by the first sense amplification circuit, to the pre-charged second input and output line pair in a read operation.
A memory device comprising:
An operation method of a memory device, comprising:
A memory device comprising:
Dependencies are inferred from the claim text.