G11C 11/2255
Bit-line or column circuits
Official title: {Bit-line or column circuits}
G11C11/2255 (Bit-line or column circuits) appears on 451 US grants and 445 published applications in this corpus.
Search patents in G11C- Granted patents
- 451
- Published applications
- 445
- Assignees
- 72
- Inventors
- 465
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2014 | 0 | 1 |
| 2015 | 1 | 2 |
| 2016 | 4 | 3 |
| 2017 | 8 | 8 |
| 2018 | 19 | 23 |
| 2019 | 29 | 47 |
| 2020 | 46 | 67 |
| 2021 | 70 | 59 |
| 2022 | 68 | 63 |
| 2023 | 79 | 58 |
| 2024 | 58 | 48 |
| 2025 | 42 | 39 |
| 2026 | 27 | 27 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Plate line drivers with a shared bias device22 Sep 2026US 12,744,070 B2Micron Technology, Inc.
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Thin film transistor deck selection in a memory device25 Aug 2026US 12,720,764 B2Micron Technology, Inc.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Memory devices, operating methods thereof and memory systems24 Sep 2026US 2026/0290421 A1Yangtze Memory Technologies Holding Co., Ltd.
- Cross-coupled differential fefet bit-cell circuit13 Aug 2026US 2026/0239624 A1
- Memory module with independently accessible memory channels formed across multiple memory dies13 Aug 2026US 2026/0240046 A1Sunrise Memory Corporation
- Nonvolatile memory device and operation method thereof6 Aug 2026US 2026/0229267 A1Samsung Electronics Co., Ltd.
- Memory device, memory array and operation method of the same16 Jul 2026US 2026/0204306 A1Macronix International Co., Ltd.
Most cited
By later US patents
- High-density low voltage non-volatile differential memory bit-cell with shared plate line76US 10,847,201 B2Kepler Computing Inc. · 2020
- Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic74US 11,482,270 B1Kepler Computing Inc. · 2022
- Apparatuses having a ferroelectric field-effect transistor memory array and related method71US 9,281,044 B2Micron Technology, Inc. · 2016
- Dynamic adjustment of memory cell digit line capacitance58US 9,786,348 B1Micron Technology, Inc. · 2017
- High-density low voltage non-volatile differential memory bit-cell with shared plate-line50US 10,998,025 B2Kepler Computing Inc. · 2021