Dynamic adjustment of memory cell digit line capacitance
AssigneeMicron Technology, Inc.
InventorsChristopher Kawamura, Charles Ingalls, Scott Derner
Life of this patent
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Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ferroelectric memory cell may be used to store a logic state. The capacitance of a digit line of the ferroelectric memory cell may be dynamically increased prior to, and during a portion of, a read operation used to determine a stored logic state of the cell. The capacitance may be increased by leveraging intrinsic capacitance of digit lines of the array—e.g., by shorting one digit line to another digit line. Increasing the capacitance of the digit line may increase the signal on the digit line that is sensed during the read operation.
Claims19
A method of operating a ferroelectric memory array, comprising:
- shorting a first digit line of a first ferroelectric memory cell with a second digit line of a second ferroelectric memory cell;
- activating a selection component that is in electronic communication with the first digit line of the first ferroelectric memory cell based at least in part on shorting the first digit line with the second digit line;
- determining that a voltage of the first digit line has reached a threshold value;
- and
- isolating the first digit line from the second digit line based at least in part on activating the selection component and the determination that the voltage of the first digit line has reached the threshold value.
A method of operating a ferroelectric memory cell, comprising:
- dynamically increasing a capacitance of a digit line of the ferroelectric memory cell;
- applying a voltage to a word line of the ferroelectric memory cell based at least in part on increasing the capacitance;
- determining that a voltage of the digit line has reached a threshold value;
- and
- reducing the capacitance of the digit line based at least in part on applying the voltage to the word line and the determination that the voltage of the digit line has reached the threshold value.
An electronic memory apparatus, comprising:
- a first ferroelectric memory cell in electronic communication with a first digit line;
- a switching component in electronic communication with the first digit line and a second digit line of a second ferroelectric memory cell;
- and
- a controller in electronic communication with the first ferroelectric memory cell and the switching component, wherein the controller is operable to:
- activate the switching component;
- activate a selection component of the first ferroelectric memory cell based at least in part on activation of the switching component;
- determining that a voltage of the first digit line has reached a threshold value;
- and
- deactivate the switching component based at least in part on activation of the selection component and the determination that the voltage of the first digit line has reached the threshold value.
Dependencies are inferred from the claim text.