G11C 11/22
Using ferroelectric elements
Official title: using ferroelectric elements
G11C11/22 (Using ferroelectric elements) appears on 3,806 US grants and 3,573 published applications in this corpus.
Search patents in G11C- Granted patents
- 3,806
- Published applications
- 3,573
- Assignees
- 491
- Inventors
- 3,479
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 7 | 0 |
| 1990 | 8 | 0 |
| 1991 | 13 | 0 |
| 1992 | 9 | 0 |
| 1993 | 17 | 0 |
| 1994 | 23 | 0 |
| 1995 | 19 | 0 |
| 1996 | 37 | 0 |
| 1997 | 42 | 0 |
| 1998 | 55 | 0 |
| 1999 | 75 | 0 |
| 2000 | 89 | 0 |
| 2001 | 86 | 46 |
| 2002 | 108 | 111 |
| 2003 | 119 | 139 |
| 2004 | 128 | 180 |
| 2005 | 166 | 203 |
| 2006 | 145 | 124 |
| 2007 | 127 | 113 |
| 2008 | 79 | 83 |
| 2009 | 55 | 73 |
| 2010 | 71 | 79 |
| 2011 | 68 | 47 |
| 2012 | 51 | 48 |
| 2013 | 46 | 31 |
| 2014 | 47 | 57 |
| 2015 | 49 | 49 |
| 2016 | 58 | 60 |
| 2017 | 81 | 93 |
| 2018 | 112 | 127 |
| 2019 | 184 | 221 |
| 2020 | 201 | 253 |
| 2021 | 243 | 276 |
| 2022 | 261 | 303 |
| 2023 | 275 | 283 |
| 2024 | 280 | 247 |
| 2025 | 222 | 180 |
| 2026 | 119 | 147 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- Ferroelectric memory architecture with gap region6 Oct 2026US 12,757,408 B2Micron Technology, Inc.
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Plate line drivers with a shared bias device22 Sep 2026US 12,744,070 B2Micron Technology, Inc.
- Semiconductor memory device and method for controlling semiconductor memory device15 Sep 2026US 12,738,308 B2Ramxeed Limited
- Ferroelectric storage apparatus and method of reading information8 Oct 2026US 2026/0311721 A1Resonac Hard Disk Corporation
- Ferroelectric memory device with multi-level bit cell1 Oct 2026US 2026/0304780 A1GLOBALFOUNDRIES U. S. Inc.
- Memory device assembly with a leaker device1 Oct 2026US 2026/0304782 A1Micron Technology, Inc.
- Bank configurable power modes24 Sep 2026US 2026/0288225 A1Micron Technology, Inc.
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Ferroelectric non-volatile logic elements435US 6,894,549 B2Ramtron International Corporation · 2005
- Planar capacitor memory cell and its applications311US 7,209,384 B12007
- Switching element with memory provided with Schottky tunnelling barrier239US 5,512,773 AU. S. Philips Corporation · 1996
- Self restoring ferroelectric memory232US 4,873,664 ARamtron Corporation · 1989
- Memory cell with volatile and non-volatile portions having ferroelectric capacitors229US 4,809,225 ARamtron Corporation · 1989