G11C 11/223
Using mos with ferroelectric gate insulating film
Official title: {using MOS with ferroelectric gate insulating film}
G11C11/223 (Using mos with ferroelectric gate insulating film) appears on 618 US grants and 717 published applications in this corpus.
Search patents in G11C- Granted patents
- 618
- Published applications
- 717
- Assignees
- 147
- Inventors
- 876
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 9 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 5 |
| 2002 | 11 | 4 |
| 2003 | 6 | 2 |
| 2004 | 0 | 2 |
| 2005 | 2 | 1 |
| 2006 | 0 | 2 |
| 2007 | 2 | 4 |
| 2008 | 2 | 7 |
| 2009 | 2 | 4 |
| 2010 | 1 | 7 |
| 2011 | 5 | 9 |
| 2012 | 9 | 0 |
| 2013 | 3 | 1 |
| 2014 | 2 | 5 |
| 2015 | 1 | 3 |
| 2016 | 6 | 8 |
| 2017 | 9 | 16 |
| 2018 | 11 | 18 |
| 2019 | 36 | 51 |
| 2020 | 47 | 62 |
| 2021 | 58 | 81 |
| 2022 | 70 | 100 |
| 2023 | 69 | 115 |
| 2024 | 97 | 93 |
| 2025 | 83 | 58 |
| 2026 | 37 | 59 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Semiconductor memory devices and methods of fabricating the same11 Aug 2026US 12,707,642 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric field effect transistors based approach for Euclidean distance calculation in neuromorphic hardware7 Jul 2026US 12,676,187 B2University of Cincinnati
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Ferroelectric memory devices and operation methods thereof17 Sep 2026US 2026/0282376 A1Yangtze Memory Technologies Co., Ltd.
- 3d ferroelectric memory device17 Sep 2026US 2026/0282383 A1Samsung Electronics Co., Ltd.
- 2d van der waals transistors gated with spin crossover/ferroelectric layers for memory applications17 Sep 2026US 2026/0282423 A1Board of Regents of the University of Nebraska
- Semiconductor device3 Sep 2026US 2026/0262261 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Non-volatile semiconductor integrated memory device164US 6,198,652 B1Kabushiki Kaisha Toshiba · 2001
- Semiconductor memory having transistors connected in series135US 6,411,548 B1Kabushiki Kaisha Toshiba · 2002
- Refreshing ferroelectric capacitors124US 5,270,967 ANational Semiconductor Corporation · 1993
- Ferroelectric dynamic random access memory105US 6,067,244 AYale University · 2000
- Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same98US 6,141,238 AMicron Technology, Inc. · 2000