2d van der waals transistors gated with spin crossover/ferroelectric layers for memory applications

Abstract

Van der Waals transistors gated with spin crossover/ferroelectric layers for memory applications are described. In certain embodiments, the transistors include a van der Waals material adjacent to a spin crossover molecular material, which is adjacent to a ferroelectric layer. In some embodiments, the van der Waals transistors are used for a thin film molecular memory that satisfies the criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. In certain embodiments, the 2D material layer and the spin crossover molecular layer are a heterostructure that reduces impedance compared to a similar memory device lacking the 2D material layer.

Dependencies are inferred from the claim text.