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US 6,067,244 AGranted
Ferroelectric dynamic random access memory
AssigneeYale University
InventorsTso-Ping Ma, Jin-Ping Han
Life of this patent
Estimating the term…
Abstract
A memory including an array of memory cells, each of which includes a ferroelectric field effect transistor (FET) as its memory element; and sense and refresh circuitry connected to the array of memory cells to read stored data within each cell by sensing source-to-drain conductivity of the ferroelectric transistor and to refresh the stored data.
Claims14
A memory comprising:
- an array of volatile memory cells, each of which includes as its memory element a ferroelectric field effect transistor (FET) which stores information in a polarization state that decays over time;
- and
- sense and refresh circuitry connected to the array of volatile memory cells and which during operation repeatedly reads stored data within each cell by sensing source-to-drain conductivity of the ferroelectric transistor and refreshes the stored data by restoring the ferroelectric Polarization state of the ferroelectric FETs of each cell.
A DRAM comprising:
- an array of volatile memory cells, each of which includes a ferroelectric field effect transistor (FET) as its memory element and which stores information as a ferroelectric polarization state, wherein the DRAM determines a stored value within any given memory cell by non-destructively sensing source-to-drain conductivity of the corresponding ferroelectric FET, and wherein the memory elements are volatile because the ferroelectric polarization state decays.
Dependencies are inferred from the claim text.