G11C 11/2253
Address circuits or decoders
Official title: {Address circuits or decoders}
G11C11/2253 (Address circuits or decoders) appears on 741 US grants and 758 published applications in this corpus.
Search patents in G11C- Granted patents
- 741
- Published applications
- 758
- Assignees
- 103
- Inventors
- 690
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 2 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 3 |
| 2010 | 3 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 2 | 0 |
| 2014 | 1 | 2 |
| 2015 | 2 | 4 |
| 2016 | 8 | 8 |
| 2017 | 18 | 21 |
| 2018 | 35 | 42 |
| 2019 | 67 | 93 |
| 2020 | 78 | 104 |
| 2021 | 110 | 95 |
| 2022 | 97 | 99 |
| 2023 | 114 | 87 |
| 2024 | 85 | 88 |
| 2025 | 74 | 56 |
| 2026 | 40 | 48 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Plate line drivers with a shared bias device22 Sep 2026US 12,744,070 B2Micron Technology, Inc.
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Thin film transistor deck selection in a memory device25 Aug 2026US 12,720,764 B2Micron Technology, Inc.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Memory devices, operating methods thereof and memory systems24 Sep 2026US 2026/0290421 A1Yangtze Memory Technologies Holding Co., Ltd.
- Semiconductor device and method for driving semiconductor device10 Sep 2026US 2026/0268955 A1Semiconductor Energy Laboratory Co.Ltd.
- Word line charge integration27 Aug 2026US 2026/0253628 A1Micron Technology, Inc.
- Memory core circuit having cell on periphery (cop) structure and memory device including the same27 Aug 2026US 2026/0253632 A1Samsung Electronics Co., Ltd.
- Non-volatile memory device having synapses for signed multiplication13 Aug 2026US 2026/0237443 A1Micron Technology, Inc.
Most cited
By later US patents
- Detecting location within a network168US 10,397,742 B2Ivani, LLC · 2019
- Ferroelectric memory cell recovery113US 9,697,913 B1Micron Technology, Inc. · 2017
- Detecting location within a network105US 9,474,042 B1Ivani, LLC · 2016
- Ferroelectric memory cells78US 10,354,712 B2Micron Technology, Inc. · 2019
- High-density low voltage non-volatile differential memory bit-cell with shared plate line76US 10,847,201 B2Kepler Computing Inc. · 2020