G11C 11/2257
Word-line or row circuits
Official title: {Word-line or row circuits}
G11C11/2257 (Word-line or row circuits) appears on 499 US grants and 504 published applications in this corpus.
Search patents in G11C- Granted patents
- 499
- Published applications
- 504
- Assignees
- 77
- Inventors
- 490
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 2 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 3 |
| 2010 | 2 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 2 |
| 2016 | 7 | 4 |
| 2017 | 7 | 9 |
| 2018 | 17 | 24 |
| 2019 | 41 | 56 |
| 2020 | 55 | 76 |
| 2021 | 75 | 62 |
| 2022 | 69 | 70 |
| 2023 | 89 | 57 |
| 2024 | 57 | 62 |
| 2025 | 52 | 40 |
| 2026 | 21 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Semiconductor memory device and operating method of the same25 Aug 2026US 12,718,884 B2Samsung Electronics Co., Ltd.
- Thin film transistor deck selection in a memory device25 Aug 2026US 12,720,764 B2Micron Technology, Inc.
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Integrated assemblies and methods of forming integrated assemblies28 Jul 2026US 12,696,483 B2Micron Technology, Inc.
- Semiconductor device and method for driving semiconductor device10 Sep 2026US 2026/0268955 A1Semiconductor Energy Laboratory Co.Ltd.
- Word line charge integration27 Aug 2026US 2026/0253628 A1Micron Technology, Inc.
- Non-volatile memory device having synapses for signed multiplication13 Aug 2026US 2026/0237443 A1Micron Technology, Inc.
- Cross-coupled differential fefet bit-cell circuit13 Aug 2026US 2026/0239624 A1
- Nonvolatile memory device and operation method thereof6 Aug 2026US 2026/0229267 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Detecting location within a network168US 10,397,742 B2Ivani, LLC · 2019
- Detecting location within a network105US 9,474,042 B1Ivani, LLC · 2016
- Ferroelectric memory cells78US 10,354,712 B2Micron Technology, Inc. · 2019
- High-density low voltage non-volatile differential memory bit-cell with shared plate line76US 10,847,201 B2Kepler Computing Inc. · 2020
- Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic74US 11,482,270 B1Kepler Computing Inc. · 2022