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US 12,696,483 B2Granted
Integrated assemblies and methods of forming integrated assemblies
AssigneeMicron Technology, Inc.
InventorsDavid K. Hwang, Richard J. Hill, Gurtej S. Sandhu
Life of this patent
Estimating the term…
Abstract
Some embodiments include an integrated assembly having an upwardly-extending structure with a sidewall surface. Two-dimensional-material extends along the sidewall surface. First electrostatic-doping-material is adjacent a lower region of the two-dimensional-material, insulative material is adjacent a central region of the two-dimensional-material, and second electrostatic-doping-material is adjacent an upper region of the two-dimensional-material. A conductive-gate-structure is over the first electrostatic-doping-material and adjacent to the insulative material. Some embodiments include methods of forming integrated assemblies.
Claims20
A method of forming an integrated assembly, comprising:
- forming structures extending upwardly from a substrate;
- the first structures being spaced from one another by gaps along a first direction;
- forming two-dimensional-material along an upper surface of the substrate within the gaps, and along sidewalls around the outer peripheries of the structures;
- forming first electrostatic-doping-material over the substrate and in direct physical contact with lower regions of the sidewalls of the two-dimensional-material adjacent the first structures;
- forming insulative material over the first electrostatic-doping-material and in direct physical contact with central regions of the sidewalls of the two-dimensional-material adjacent the structures;
- forming a conductive-gate-structure over the first electrostatic-doping-material and adjacent the insulative material;
- and
- forming second electrostatic-doping-material over the conductive-gate-structure and over the insulative material, the second electrostatic-doping-material being in direct physical contact with upper regions of the sidewalls of the two-dimensional-material adjacent the structures.
5 more elements
A method of forming an integrated assembly, comprising:
- forming an upwardly-extending pillar structure that extends upwardly relative to an upper surface of a substrate, the upwardly-extending structure having a pair of vertical sidewall surfaces along a cross-section, and having a top surface extending between the vertical sidewall surfaces;
- one of the vertical sidewall surfaces being a first vertical sidewall surface and the other of the vertical sidewall surfaces being a second vertical sidewall surface, an entirety of the upwardly-extending pillar structure consisting of one or more insulative materials;
- forming a two-dimensional-material in direct physical contact with adjacent the first vertical sidewall surface and extending along an entirety of the first vertical sidewall surface;
- the two-dimensional-material having a lower sidewall region, an upper vertical sidewall region, and a central vertical sidewall region between the upper and lower vertical sidewall regions;
- forming a first electrostatic-doping-material in direct physical contact with adjacent the lower vertical sidewall region of the two-dimensional-material;
- forming a second insulative material in direct physical contact with adjacent the central vertical sidewall region of the two-dimensional-material and on an opposing side of the two-dimensional-material from the first vertical sidewall surface of the upwardly-extending pillar structure;
- forming a conductive-gate-structure over the first electrostatic-doping-material, adjacent the second insulative material, and proximate the central region of the two-dimensional-material;
- and
- forming a second electrostatic-doping-material over the conductive-gate-structure and in direct physical contact with adjacent the upper vertical sidewall region of the two-dimensional-material.
6 more elements
A method of forming an integrated assembly, comprising:
- forming a first conductive lines extending horizontally along a first direction;
- forming pillar structures extending upwardly from the first conductive lines;
- the pillar structures comprising first insulative material, the pillar structures being spaced from one another by gaps along the first direction;
- forming a two-dimensional-material extending along upper surfaces of the first conductive lines within the gaps, and along vertical sidewalls and upper surfaces outer peripheries of the pillar structures;
- forming a first electrostatic-doping-material over and in direct physical contact with the two-dimensional material that is along the upper surfaces of the first conductive lines, the first electrostatic-doping-material being in direct physical contact with adjacent lower vertical sidewall regions of the two-dimensional-material adjacent the structures;
- forming a second insulative material over the first electrostatic-doping-material and in direct physical contact with adjacent central vertical sidewall regions of the two-dimensional-material adjacent the structures;
- forming second conductive lines extending along a second direction which crosses the first direction;
- the second conductive lines being over the first electrostatic-doping-material and being adjacent the second insulative material;
- forming a second electrostatic-doping-material over the second conductive lines and over the second insulative material, the second electrostatic-doping-material being in direct physical contact with adjacent upper vertical sidewall regions of the two-dimensional-material adjacent the structures;
- and
- forming storage elements coupled with the upper region of the two-dimensional-material.
8 more elements
Dependencies are inferred from the claim text.