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US 2026/0237443 A1Published application
Non-volatile memory device having synapses for signed multiplication
AssigneeMicron Technology, Inc.
InventorsAdam David Johnson, Hernan Castro
Life of this patent
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Abstract
Systems, methods, and apparatus related to memory devices that perform multiplication. In one approach, multiple synapses are connected to digit lines used to accumulate charge from memory cells of each synapse. Each synapse includes positive and negative side memory cells. The memory cells are populated with values to use during multiplication. The values are configured based on the polarities of a signed weight stored by the synapse and a signed input signal to be applied to the synapse during the multiplication.
Claims29
An apparatus comprising:
- a plurality of ferroelectric memory cells, each memory cell having a capacitor and configured to store a weight;
- a plurality of wordlines, each wordline connected to a respective one of the memory cells;
- and
- at least one controller configured to select the wordlines to multiply an input signal by the weights stored in the memory cells.
1 more element
A device comprising:
- a plurality of digit lines;
- and
- a plurality of synapses, each synapse configured to store a weight and having first and second memory cells coupled to the digit lines, wherein the first memory cells correspond to a polarity of a product, and the second memory cells correspond to an opposite polarity of the product.
A method comprising:
- reading values from first memory cells of a synapse;
- storing the read values in first and second portions of temporary storage;
- and
- based on an input polarity and a weight polarity, selecting one of the first or second portions and changing the values in the selected portion to zero.
1 more element
Dependencies are inferred from the claim text.