G03F 7/167
From the gas phase, by plasma deposition
Official title: {from the gas phase, by plasma deposition (G03F7/2035 takes precedence)}
G03F7/167 (From the gas phase, by plasma deposition) appears on 187 US grants and 309 published applications in this corpus.
Search patents in G03F- Granted patents
- 187
- Published applications
- 309
- Assignees
- 85
- Inventors
- 593
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 2 |
| 2002 | 1 | 1 |
| 2003 | 3 | 2 |
| 2004 | 2 | 2 |
| 2005 | 2 | 1 |
| 2006 | 3 | 2 |
| 2007 | 1 | 3 |
| 2008 | 1 | 0 |
| 2009 | 3 | 1 |
| 2010 | 0 | 2 |
| 2011 | 0 | 2 |
| 2012 | 2 | 4 |
| 2013 | 1 | 1 |
| 2014 | 2 | 8 |
| 2015 | 5 | 5 |
| 2016 | 1 | 2 |
| 2017 | 6 | 6 |
| 2018 | 5 | 6 |
| 2019 | 5 | 11 |
| 2020 | 7 | 10 |
| 2021 | 6 | 27 |
| 2022 | 10 | 43 |
| 2023 | 13 | 44 |
| 2024 | 19 | 49 |
| 2025 | 37 | 55 |
| 2026 | 18 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatus and process for EUV dry resist sensitization by gas phase infusion of a sensitizer15 Sep 2026US 12,736,874 B2Lam Research Corporation
- Imprint compositions with passivated nanoparticles and materials and processes for making the same8 Sep 2026US 12,730,372 B2APPLIED Materials.Inc.
- Apparatus and method for treating substrate23 Jun 2026US 12,663,721 B2Semes Co., Ltd.
- Method of manufacturing a semiconductor device9 Jun 2026US 12,650,642 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method to reduce line edge roughness for EUV photoresist pattern9 Jun 2026US 12,650,648 B2APPLIED Materials.Inc.
- Method for forming an underlayer, semiconductor structure, and reactor system1 Oct 2026US 2026/0299421 A1ASM IP Holding B. V.
- Dry chamber clean of photoresist films10 Sep 2026US 2026/0269199 A1Lam Research Corporation
- Structure including a photoresist underlayer and method of forming same13 Aug 2026US 2026/0239931 A1ASM IP Holding B. V.
- Pattern forming method and method for producing semiconductor device6 Aug 2026US 2026/0227702 A1
- Substrate, method for manufacturing substrate for manufacturing semiconductor, and method for manufacturing semiconductor substrate9 Jul 2026US 2026/0194809 A1Jsr Corporation
Most cited
By later US patents
- Lithography patterning with a gas phase resist422US 10,018,920 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Method of forming a carbon polymer film using plasma CVD422US 7,504,344 B2ASM Japan K .K. · 2009
- EUV photopatterning of vapor-deposited metal oxide-containing hardmasks405US 9,996,004 B2Lam Research Corporation · 2018
- Vacuum-integrated hardmask processes and apparatus389US 9,778,561 B2Lam Research Corporation · 2017
- Atomic layer deposition lithography343US 8,932,802 B2APPLIED Materials.Inc. · 2015