Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising:

• depositing a resist layer over a substrate;
• wherein the resist layer comprises a reaction product of an organometallic compound and a second compound, wherein the second compound is at least one of an amine, a borane, a phosphine, or water;
• forming a protective layer over the resist layer;
• selectively exposing the resist layer to actinic radiation through the protective layer;
• removing portions of the resist layer not exposed to the actinic radiation to form a pattern of remaining portions of the resist layer that were exposed to the actinic radiation during the selectively exposing the resist layer;
• and
• removing the protective layer during the removing portions of the resist layer.

A method of manufacturing a semiconductor device, comprising:

• depositing a resist layer over a substrate surface,
• wherein the resist layer comprises a reaction product of an organometallic compound and an amine;
• forming a protective layer over the resist layer;
• after forming the protective layer, selectively crosslinking the resist layer;
• removing portions of the resist layer not crosslinked to expose portions of the substrate surface;
• and
• removing the protective layer.