Atomic layer deposition lithography
AssigneeApplied Materials, Inc.
InventorsBanqiu Wu, Ajay Kumar, Omkaram Nalamasu
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Abstract
Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.
Claims16
A method for forming features on a compound layer in a device, comprising:
- (a) pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a compound layer on the substrate surface;
- (b) directing an energetic radiation to treat a first region of the first monolayer;
- (c) removing the first monolayer from the first region;
- and
- (d) pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer, wherein the second monolayer reacts with the first monolayer to form a compound layer on the second region.
A method for forming features on a compound layer in a device, comprising:
- directing an energetic radiation to treat a first region of a first monolayer of a compound layer deposited by a pulse of a first reactant gas mixture performed in an atomic layer deposition process;
- continuing to perform the atomic layer deposition process to form a second monolayer on the first monolayer of the compound layer, the second monolayer failing to adhere to the first region of the first monolayer, wherein the second monolayer reacts with the first monolayer to form a compound layer on a second region;
- and
- removing the first monolayer in the first region treated by a light radiation.
A method for forming features on a compound layer in a semiconductor device, comprising:
- (a) pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a compound layer on the substrate surface;
- (b) directing a light radiation to treat a first region of the first monolayer;
- (c) pulsing a second reactant gas mixture to selectively form a second monolayer on the first region of the first monolayer, the second monolayer failing to adhere to the second region of the first monolayer, wherein the second monolayer reacts with the first monolayer to form a compound layer on the first region;
- and
- (d) selectively removing a second region of the first monolayer that was not treated by the light radiation.
Dependencies are inferred from the claim text.