Method of forming a carbon polymer film using plasma CVD
AssigneeASM Japan K.K.
InventorsNobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
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Abstract
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
Claims31
A method of forming a hydrocarbon-based polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
- vaporizing a hydrocarbon-based liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more;
- γ is an integer including zero;
- X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group;
- introducing said vaporized gas into a CVD reaction chamber inside which a substrate is placed;
- and
- forming a hydrocarbon-based polymer film on said substrate by plasma polymerization of said gas.
A method of forming a hydrocarbon-based polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
- placing a semiconductor device substrate in a CVD reaction chamber;
- vaporizing a hydrocarbon-based liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more;
- γ is an integer including zero;
- X is O, N or F) having a boiling point of about 20° C. to about 350° C.;
- introducing said vaporized gas into the CVD reaction chamber inside which the substrate is placed;
- and
- forming a hard mask comprising a hydrocarbon-based polymer film on said substrate by plasma polymerization of said gas.
A method of forming a hydrocarbon-based polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:
- introducing a hydrocarbon-based liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more;
- γ is an integer including zero;
- X is O, N or F) having a boiling point of about 20° C. to about 350° C. into a heater through a flow control valve and further through a shutoff valve disposed downstream of the flow control valve and kept at approximately 80° C. or lower and thereby vaporizing the monomer;
- introducing the vaporized gas into a CVD reaction chamber inside which the substrate is placed;
- and
- forming a hydrocarbon-based polymer film on said substrate by plasma polymerization of said gas.
Dependencies are inferred from the claim text.