Structure including a photoresist underlayer and method of forming same
AssigneeASM IP Holding B.V.
InventorsYiting Sun, David de Roest, Daniele Piumi, Ivo Johannes Raaijmakers, BokHeon Kim, Timothee Blanquart, Yoann Tomczak
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Abstract
Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.
Claims20
A method of forming a structure, the method comprising the steps:
- providing a substrate to a reaction chamber, the substrate comprising a top material layer;
- using a plasma-enhanced cyclic process, depositing an underlayer having a thickness of less than 5 nm directly on the top material layer;
- forming an EUV photoresist layer adhered and in direct contact with the underlayer;
- and
- removing all of the underlayer material remaining after etching the top material layer.
A method of forming a structure, the method comprising the steps of:
- providing a substrate;
- forming a photoresist underlayer directly overlying a material layer on a surface of the substrate;
- forming an EUV photoresist layer overlying and adhered to and in direct contact with the photoresist underlayer;
- and
- removing underlayer material remaining after etching the material layer,
- wherein the photoresist underlayer comprises a bilayer comprising a lower underlayer part and an upper underlayer part, the lower underlayer part comprising V, Cr, Fe, Co, Ni, Cu, Zr, Mo, Ru, Hf, Ta, W, B, Ge, As, Sb, or Te, or an oxide of Ti, Sr, Zn, Al, Ta, or Sn, or a nitride of Sr, Zn, Al, and Sn, and/or comprises a dopant selected from Cd, Ag, In, Sb, Sn, I, Te, and Cs, and the upper underlayer part comprising silicon, oxygen, and carbon.
A method of forming a structure, the method comprising the steps of:
- providing a substrate;
- forming a photoresist underlayer directly overlying a material layer on a surface of the substrate;
- forming an EUV photoresist layer overlying and adhered to and in direct contact with the photoresist underlayer;
- and
- removing underlayer material remaining after etching the material layer,
- wherein the photoresist underlayer comprises a bilayer comprising a lower underlayer part and an upper underlayer part, the lower underlayer part comprising metal and/or a dopant, and the upper underlayer part comprising silicon, oxygen, and carbon.
Dependencies are inferred from the claim text.