Lithography patterning with a gas phase resist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Hao Chang, Kuo-Chang Kau, Kevin Huang, Jeng-Horng Chen
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Abstract
Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
Claims20
A method for lithography patterning, comprising:
- providing a substrate;
- forming a deposition enhancement layer (DEL) over the substrate;
- flowing an organic gas near a surface of the DEL;
- during the flowing of the organic gas, irradiating the DEL and the organic gas with a patterned radiation, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL;
- and
- etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
A method, comprising:
- directing a patterned radiation towards a surface of a deposition enhancement layer (DEL) over a substrate, wherein the DEL comprises a metal, an oxide of the metal, or a metal complex having atoms of the metal, the metal being one of Ru, Ce, La, Sb, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, Sn, and Bi;
- supplying an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the surface of the DEL;
- moving the substrate and the DEL relative to the patterned radiation such that the resist pattern is formed across an area of the DEL;
- stopping the supplying of the organic gas when the resist pattern is formed near an edge of the DEL;
- and
- etching the DEL using the resist pattern as an etch mask.
A method for lithography patterning, comprising:
- providing a substrate;
- forming a deposition enhancement layer (DEL) over the substrate, wherein the DEL comprises a polymer having a functional group selected from a group consisting of —I, —Br, —Cl, —NH2, —COOH, —OH, —SH, —N3, —S(═O)—, alkene, alkyne, imine, ether, vinyl ether, acetal, hemiacetal, ester, aldehyde, ketone, amide, sulfone, acetic acid, cyanide, and allene;
- flowing an organic gas near a surface of the DEL, the organic gas including a C3-C20 alkyl cross-linking group;
- during the flowing of the organic gas, irradiating the DEL and the organic gas with a patterned radiation, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL;
- and
- patterning the DEL using the resist pattern.
Dependencies are inferred from the claim text.