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US 2026/0227702 A1Published application
Pattern forming method and method for producing semiconductor device
OwnerGenna HASEGAWA, Hisako AOYAMAinventors
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Abstract
In a pattern forming method, a first film having a first pattern is formed on a workpiece, and a second film is formed on the first film. Next, the second film is etched back, the first film is removed, and a second pattern obtained by inverting the first pattern is formed in the second film. Next, a crosslinking rate of the second film is increased, and the workpiece is etched using the second pattern as a mask.
Claims15
A pattern forming method comprising:
- forming a first film having a first pattern on a workpiece;
- forming a second film on the first film;
- etching the second film, removing the first film, and forming a second pattern obtained by inverting the first pattern on the second film;
- processing the second film to increase a crosslinking rate of the second film;
- and
- etching the workpiece using the second pattern as a mask.
3 more elements
A method for producing a semiconductor device, the method comprising:
- forming a first film having a first pattern on a workpiece formed on a semiconductor substrate of the semiconductor device;
- forming a second film on the first film;
- etching the second film, removing the first film, and forming a second pattern obtained by inverting the first pattern on the second film;
- processing the second film to increase a crosslinking rate of the second film;
- and
- etching the workpiece using the second pattern as a mask.
3 more elements
Dependencies are inferred from the claim text.