G01R 31/2623
For measuring break-down voltage therefor
Official title: {for measuring break-down voltage therefor}
G01R31/2623 (For measuring break-down voltage therefor) appears on 68 US grants and 69 published applications in this corpus.
Search patents in G01R- Granted patents
- 68
- Published applications
- 69
- Assignees
- 55
- Inventors
- 187
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 3 |
| 2003 | 2 | 0 |
| 2004 | 2 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 2 | 2 |
| 2008 | 3 | 2 |
| 2009 | 3 | 2 |
| 2010 | 0 | 1 |
| 2011 | 2 | 2 |
| 2012 | 1 | 1 |
| 2013 | 0 | 3 |
| 2014 | 0 | 1 |
| 2015 | 1 | 5 |
| 2016 | 3 | 5 |
| 2017 | 6 | 5 |
| 2018 | 3 | 3 |
| 2019 | 3 | 0 |
| 2020 | 3 | 4 |
| 2021 | 1 | 5 |
| 2022 | 6 | 8 |
| 2023 | 8 | 7 |
| 2024 | 6 | 5 |
| 2025 | 2 | 3 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of testing a semiconductor device as well as a corresponding testing device9 Jun 2026US 12,650,456 B2Nexperia B. V.
- Power device threshold voltage measurement circuit and operation method thereof13 Jan 2026US 12,523,694 B2National Yang Ming.Chiao Tung University
- Method for predicting failure of semiconductor device, and semiconductor device21 Oct 2025US 12,449,471 B2Denso Corporation
- Protection circuit for high temperature reverse bias test27 May 2025US 12,316,099 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Deterioration checking apparatus and deterioration checking27 Aug 2024US 12,072,368 B2Kabushiki Kaisha Toshiba
- Measuring method and manufacturing method18 Sep 2025US 2025/0290967 A1Fuji Electric Co., Ltd.
- Machine Learning-based Tool to Characterize Individual Oxide Defects8 May 2025US 2025/0147094 A1
- Power device threshold voltage measurement circuit and operation method thereof20 Feb 2025US 2025/0060403 A1National Yang Ming.Chiao Tung University
- Probe card for device under test7 Nov 2024US 2024/0369614 A1
- Engageable Electric Connector for Supplemental Electric Circuit31 Oct 2024US 2024/0361364 A1
Most cited
By later US patents
- Electrostatic discharge test structure system and method17US 5,675,260 ALSI Logic Corporation · 1997
- Insulated-gate semiconductor device having a position recognizing pattern directly on the gate contact area17US 5,734,175 ARohm Co., Ltd. · 1998
- Method for optimizing the structure of a transistor to withstand electrostatic discharge14US 5,410,254 ALSI Logic Corporation · 1995
- Method of determining dielectric time-to-breakdown13US 6,188,234 B1International Business Machines Corporation · 2001
- TDDB test pattern and method for testing TDDB of MOS capacitor dielectric8US 6,351,135 B1LG Semicon Co., Ltd. · 2002