Method of testing a semiconductor device as well as a corresponding testing device
AssigneeNexperia B.V.
InventorMagnus Siegfried Rummey
Life of this patent
Estimating the term…
Abstract
A method of testing a semiconductor device, in a package, having a junction between a semiconductor material of a first type and a semiconductor material of a second type. The junction has a temperature dependent breakdown voltage, and the method includes the steps of determining the breakdown voltage, providing a fixed voltage over the junction, via pins of the package, and the fixed voltage is higher than the breakdown voltage, and measuring, via pins of the package, a breakdown current flowing through the junction, determining a dissipated power based on the fixed voltage and the measured breakdown current, and the dissipated power is a qualitive measure for the semiconductor device.
Claims18
A method of testing a semiconductor device, in a package, having a junction between a semiconductor material of a first type and a semiconductor material of a second type, wherein the junction has a temperature dependent breakdown voltage, the method comprises the steps of:
- determining the breakdown voltage;
- providing a fixed voltage over the junction, via pins of the package, wherein the fixed voltage is higher than the breakdown voltage, and measuring, via the pins of the package, a breakdown current flowing through the junction;
- and
- determining a dissipated power based on the fixed voltage and the measured breakdown current, wherein the dissipated power is a qualitive measure for the semiconductor device.
A testing device for testing a semiconductor device, in a package, having a junction between a semiconductor material of a first type and a semiconductor material of a second type, wherein the junction has a temperature dependent breakdown voltage, the testing device comprising:
- process equipment arranged to determine the breakdown voltage;
- provide equipment arranged to provide a fixed voltage over the junction, via pins of the package, wherein the fixed voltage is higher than the breakdown voltage, and measuring, via the pins of the package, a breakdown current flowing through the junction;
- wherein the process equipment is further arranged for determining a dissipated power based on the fixed voltage and the measured breakdown current, and wherein the dissipated power is a qualitive measure for the semiconductor device.
Dependencies are inferred from the claim text.