Protection circuit for high temperature reverse bias test
AssigneeInnoscience (Suzhou) Semiconductor Co., Ltd.
InventorsYiming Lin, Kai Hu, Jianjian Sheng
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AssigneeInnoscience (Suzhou) Semiconductor Co., Ltd.
InventorsYiming Lin, Kai Hu, Jianjian Sheng
Estimating the term…
The present disclosure provides a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising: a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal; a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch such that the drain-source leakage current is blocked by the switch when the current-sensing signal is higher than a reference voltage.
A protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising:
A method for implementing a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, comprising:
A protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising:
Dependencies are inferred from the claim text.