C23C 16/42
Silicides
C23C16/42 (Silicides) appears on 277 US grants and 346 published applications in this corpus.
Search patents in C23C- Granted patents
- 277
- Published applications
- 346
- Assignees
- 160
- Inventors
- 919
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 10 | 0 |
| 2000 | 5 | 0 |
| 2001 | 15 | 2 |
| 2002 | 5 | 12 |
| 2003 | 8 | 14 |
| 2004 | 12 | 5 |
| 2005 | 4 | 10 |
| 2006 | 8 | 14 |
| 2007 | 4 | 3 |
| 2008 | 4 | 4 |
| 2009 | 4 | 9 |
| 2010 | 4 | 4 |
| 2011 | 4 | 6 |
| 2012 | 2 | 5 |
| 2013 | 2 | 8 |
| 2014 | 7 | 7 |
| 2015 | 8 | 13 |
| 2016 | 9 | 18 |
| 2017 | 6 | 14 |
| 2018 | 7 | 18 |
| 2019 | 13 | 16 |
| 2020 | 15 | 18 |
| 2021 | 11 | 12 |
| 2022 | 10 | 23 |
| 2023 | 8 | 18 |
| 2024 | 23 | 24 |
| 2025 | 11 | 44 |
| 2026 | 11 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming silicon nitride film and film forming apparatus25 Aug 2026US 12,721,063 B2Tokyo Electron Limited
- Semiconductor manufacturing apparatus and component for semiconductor manufacturing apparatus18 Aug 2026US 12,712,157 B2Tokyo Electron Limited
- Method for forming silicon oxide film11 Aug 2026US 12,703,914 B2Air Water Inc.
- Multi-region diffusion barrier containing titanium, silicon and nitrogen9 Jun 2026US 12,653,008 B2Eugenus, Inc.
- SiC formed body and method for producing SiC formed body26 May 2026US 12,637,762 B2Tokai Carbon Co., Ltd.
- Film formation method and film formation apparatus20 Aug 2026US 2026/0242940 A1Tokyo Electron Limited
- Sulfur-containing siloxane, composition for forming silicon-containing film comprising said sulfur-containing siloxane, sulfur-containing siloxane production method, silicon-containing film, and silicon-containing film production method20 Aug 2026US 2026/0242947 A1Sumitomo Seika Chemicals Co., Ltd.
- Furnace tube for plasma enhanced thin film deposition13 Aug 2026US 2026/0234802 A1ACM Research Korea CO., LTD.
- Sic-containing film and method for producing same30 Jul 2026US 2026/0218375 A1Japan Advanced Chemicals Ltd.
- Method of forming metal silicide30 Jul 2026US 2026/0218377 A1ASM IP Holding B. V.
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Atomic layer deposition of hafnium-based high-k dielectric560US 7,205,247 B2Aviza Technology, Inc. · 2007
- Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films474US 9,691,771 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude · 2017
- ALD of tantalum using a hydride reducing agent301US 7,144,806 B1Novellus Systems, Inc. · 2006
- Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor296US 5,567,243 AMaterials Research Corporation · 1996