Method of forming metal silicide
AssigneeASM IP Holding B.V.
InventorsJonathan Bakke, Wei Li, Sisi Wang
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Abstract
Methods of forming a transition metal silicide are disclosed. Exemplary methods include selectively forming a transition metal silicide on a first surface relative to a second surface. The step of forming the transition metal silicide can include providing a catalyst. Additionally or alternatively, exemplary methods can include a cleaning and/or surface treatment step prior to forming the transition metal silicide. Methods described herein may be particularly useful in forming structures suitable for NMOS devices.
Claims20
A method of forming a structure, the method comprising:
- providing a substrate, comprising a semiconductor surface, within a reaction chamber of a reactor;
- and
- forming a transition metal silicide layer on the semiconductor surface using a cyclical deposition process, the cyclical deposition process comprising the steps of:
- providing a pulse of a transition metal precursor to the reaction chamber;
- providing a pulse of a silicon precursor to the reaction chamber;
- and
- providing a catalyst to the reaction chamber.
A method of forming a structure, the method comprising:
- providing a substrate, comprising a semiconductor surface, within a reaction chamber of a reactor;
- performing a plasma treatment;
- and
- forming a transition metal silicide layer on the semiconductor surface using a cyclical deposition process, the cyclical deposition process comprising the steps of:
- providing a pulse of a transition metal precursor to the reaction chamber;
- providing a pulse of a silicon precursor to the reaction chamber;
- and
- optionally providing a catalyst to the reaction chamber.
Dependencies are inferred from the claim text.