Sic-containing film and method for producing same

Abstract

The present invention is directed to providing, for example, a novel production method capable of highly efficiently and conformally depositing a SiC-containing film having a relatively high content ratio of a silicon atom by a production process with high productivity. The present invention provides a method for producing a SiC-containing film, comprising the steps of: providing XpHnSim-C≡C-SiqHrXs (wherein m is an integer of 0 or larger and 4 or smaller, each of n and p is an integer of 0 or larger and 2m+1 or smaller and satisfies n+p=2m+1, q is an integer of 1 or larger and 4 or smaller, each of r and s is an integer of 0 or larger and 2q+1 or smaller and satisfies r+s=2q+1, and each X is independently a halogen element selected from F, Cl, Br, and I) as a starting material gas (S1 step); and supplying the starting material gas into a chamber containing a workpiece having a surface for film deposition, and depositing a SiC-containing film on the surface for film deposition by a chemical vapor deposition method or an atomic layer deposition method through thermal reaction, the SiC-containing film comprising Si and C as main components, wherein a ratio of the number of silicon atoms to the number of carbon atoms (Si/C) is 0.70 or more (S2 step).

Dependencies are inferred from the claim text.