Film formation method and film formation apparatus

A film formation apparatus, comprising:

• a chamber in which a substrate is accommodated;
• a gas supply mechanism configured to supply gases including a Si source gas and a reaction gas into the chamber;
• an exhaust mechanism configured to evacuate an interior of the chamber;
• a heater configured to heat the substrate;
• and
• a controller,
• wherein the controller is configured to form a film containing Si and O on the substrate by alternately performing:
• supplying a Si-containing compound gas having a structural Formula (1) below as the Si source gas to the substrate accommodated in the chamber;
• and
• supplying an OH-containing gas as the reaction gas to the substrate,
• wherein R1 is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, a linear or branched alkoxy group having 1 to 4 carbon atoms, a linear or branched alkylthio group having 1 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms,
• wherein a ring R2 is a heterocyclic ring containing a nitrogen atom,
• wherein m is an integer of 1 to 5, n is an integer of 1 to 4, and
• wherein the ring R2 is a 3- to 6-membered ring.