SiC formed body and method for producing SiC formed body
AssigneeTokai Carbon Co., Ltd.
InventorsMayuri Imagawa, Shohei Oishi, Akihiro Kuroyanagi, Reiko Yashikida
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Abstract
An object of the present disclosure is to provide a SiC formed body having low resistance and a method for producing the SiC formed body. The present disclosure provides a SiC formed body wherein a volume resistivity thereof is 7.0×10−3 Ω·cm or less, and a nitrogen concentration thereof is in a range exceeding 1000 ppm and up to 4500 ppm.
Claims3
A SiC formed body having a volume resistivity of 7.0×10−3 Ω·cm or less, a nitrogen concentration in a range of more than 1000 ppm and up to 4500 ppm, and a ratio of CN− peak intensity to SiN− peak intensity of 1.2 or more, as measured by time-of-flight secondary ion mass spectrometry.
Dependencies are inferred from the claim text.