C23C 16/325
Silicon carbide
Official title: {Silicon carbide}
C23C16/325 (Silicon carbide) appears on 740 US grants and 941 published applications in this corpus.
Search patents in C23C- Granted patents
- 740
- Published applications
- 941
- Assignees
- 362
- Inventors
- 1,907
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 12 | 0 |
| 1992 | 7 | 0 |
| 1993 | 9 | 0 |
| 1994 | 12 | 0 |
| 1995 | 9 | 0 |
| 1996 | 6 | 0 |
| 1997 | 7 | 0 |
| 1998 | 10 | 0 |
| 1999 | 9 | 0 |
| 2000 | 10 | 0 |
| 2001 | 11 | 1 |
| 2002 | 16 | 22 |
| 2003 | 17 | 25 |
| 2004 | 18 | 18 |
| 2005 | 20 | 31 |
| 2006 | 17 | 20 |
| 2007 | 14 | 18 |
| 2008 | 15 | 10 |
| 2009 | 4 | 23 |
| 2010 | 15 | 24 |
| 2011 | 15 | 24 |
| 2012 | 16 | 26 |
| 2013 | 16 | 23 |
| 2014 | 17 | 23 |
| 2015 | 20 | 31 |
| 2016 | 20 | 50 |
| 2017 | 18 | 40 |
| 2018 | 28 | 52 |
| 2019 | 43 | 55 |
| 2020 | 42 | 66 |
| 2021 | 34 | 53 |
| 2022 | 42 | 73 |
| 2023 | 42 | 60 |
| 2024 | 34 | 66 |
| 2025 | 55 | 58 |
| 2026 | 25 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming silicon carbide conversion coat on carbon using gas phase reactions6 Oct 2026US 12,753,492 B2Goodrich Corporation
- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Semiconductor manufacturing apparatus and component for semiconductor manufacturing apparatus18 Aug 2026US 12,712,157 B2Tokyo Electron Limited
- Method for producing a solar cell11 Aug 2026US 12,707,755 B2Hanwha Q Cells GmbH
- Refractory carbide layer28 Jul 2026US 12,692,594 B2Sgl Carbon SE
- Process for manufacturing a silicon carbide coated body8 Oct 2026US 2026/0308754 A1APPLIED Materials.Inc.
- Etching of silicon carbide accretions from reactor parts1 Oct 2026US 2026/0297735 A1ASM IP Holding B. V.
- Method for producing a silicon carbide substrate24 Sep 2026US 2026/0286508 A1
- Rbsic component comprising an sic coating, use of an sic coating, and method for manufacturing a component17 Sep 2026US 2026/0275506 A1
- Refractory carbide layer17 Sep 2026US 2026/0275507 A1Sgl Carbon SE
Most cited
By later US patents
- Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same643US 4,978,567 AMaterials Technology Corporation, subsidiary of the Carbon/Graphite Group, Inc. · 1990
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- CVD of silicon-based ceramic materials on internal surface of a reactor587US 5,413,813 AEnichem S.p.A. · 1995
- Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control557US 8,722,546 B2ASM IP Holding B. V. · 2014
- Method of depositing film by atomic layer deposition with pulse-time-modulated plasma529US 8,465,811 B2ASM Japan K .K. · 2013