C23C 16/32
Carbides
C23C16/32 (Carbides) appears on 1,107 US grants and 1,321 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,107
- Published applications
- 1,321
- Assignees
- 491
- Inventors
- 2,731
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 10 | 0 |
| 1988 | 9 | 0 |
| 1989 | 11 | 0 |
| 1990 | 13 | 0 |
| 1991 | 17 | 0 |
| 1992 | 11 | 0 |
| 1993 | 13 | 0 |
| 1994 | 18 | 0 |
| 1995 | 12 | 0 |
| 1996 | 8 | 0 |
| 1997 | 9 | 0 |
| 1998 | 15 | 0 |
| 1999 | 14 | 0 |
| 2000 | 10 | 0 |
| 2001 | 13 | 2 |
| 2002 | 22 | 25 |
| 2003 | 22 | 27 |
| 2004 | 26 | 27 |
| 2005 | 25 | 37 |
| 2006 | 20 | 26 |
| 2007 | 18 | 32 |
| 2008 | 20 | 18 |
| 2009 | 7 | 28 |
| 2010 | 23 | 32 |
| 2011 | 23 | 28 |
| 2012 | 21 | 35 |
| 2013 | 21 | 33 |
| 2014 | 25 | 37 |
| 2015 | 29 | 44 |
| 2016 | 30 | 72 |
| 2017 | 38 | 65 |
| 2018 | 42 | 71 |
| 2019 | 64 | 84 |
| 2020 | 60 | 99 |
| 2021 | 54 | 74 |
| 2022 | 64 | 110 |
| 2023 | 61 | 82 |
| 2024 | 54 | 83 |
| 2025 | 77 | 77 |
| 2026 | 33 | 73 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming silicon carbide conversion coat on carbon using gas phase reactions6 Oct 2026US 12,753,492 B2Goodrich Corporation
- Film forming method and film forming apparatus29 Sep 2026US 12,747,496 B2Tokyo Electron Limited
- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Semiconductor manufacturing apparatus and component for semiconductor manufacturing apparatus18 Aug 2026US 12,712,157 B2Tokyo Electron Limited
- Method for producing a solar cell11 Aug 2026US 12,707,755 B2Hanwha Q Cells GmbH
- Process for manufacturing a silicon carbide coated body8 Oct 2026US 2026/0308754 A1APPLIED Materials.Inc.
- Etching of silicon carbide accretions from reactor parts1 Oct 2026US 2026/0297735 A1ASM IP Holding B. V.
- Method for producing a silicon carbide substrate24 Sep 2026US 2026/0286508 A1
- Rbsic component comprising an sic coating, use of an sic coating, and method for manufacturing a component17 Sep 2026US 2026/0275506 A1
- Refractory carbide layer17 Sep 2026US 2026/0275507 A1Sgl Carbon SE
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same643US 4,978,567 AMaterials Technology Corporation, subsidiary of the Carbon/Graphite Group, Inc. · 1990
- Vapor deposition of metal carbide films610US 7,611,751 B2ASM America, Inc. · 2009
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- CVD of silicon-based ceramic materials on internal surface of a reactor587US 5,413,813 AEnichem S.p.A. · 1995