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US 2026/0275507 A1Published application
Refractory carbide layer
AssigneeSgl Carbon SE
InventorsCharles WIJAYAWARDHANA, Christian MILITZER, Jing-Jia HUANG, Urban FORSBERG, Henrik PEDERSEN
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Abstract
A chemical vapor deposition (CVD) method for preparing a layer comprising refractory carbide crystals, in particular silicon carbide crystals. At least a portion of the layer is formed from a gas mixture containing a silicon source and an aromatic carbon source. The molar C/Si ratio in the gas mixture is from about 0.85 to about 1.45. Also, layers obtainable by the method, as well as their uses and applications in various industries.
Claims14
A layer comprising silicon carbide crystals,
- wherein a surface of the layer has a mean linear intercept surface grain size in a range of 0.2-25 μm;
- and
- wherein the surface of the layer comprises refractory carbide crystal tops having a regular hexagonal pyramid shape.
Dependencies are inferred from the claim text.