Back to results
US 2026/0308754 A1Published application
Process for manufacturing a silicon carbide coated body
AssigneeApplied Materials, Inc.
InventorsPeter J. GUERCIO, Paul WESTPHAL, Kirk Allen FISHER
Life of this patent
Estimating the term…
Abstract
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
Claims20
A method of manufacturing a silicon carbide coated graphite body by chemical vapor deposition, comprising:
- providing as a porous graphite body a porous graphite substrate having an open porosity between 6% and less than 12% into a reaction chamber;
- heating the porous graphite substrate in the reaction chamber to a temperature in a range of 1000 to 1200° C. under atmospheric pressure in a presence of a flow of H2 gas;
- exposing the porous graphite body to a first mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a first amount of dimethyldichlorosilane;
- depositing, in a first deposition phase, a substantially stoichiometric silicon carbide, having a Si:C ratio of 1:1, with substantially tetrahedral silicon carbide crystals on the porous graphite substrate to form a first silicon carbide coating layer, wherein the substantially tetrahedral silicon carbide crystals are formed on an outer surface of the porous graphite substrate and in pores of the porous graphite substrate to form a crystalline silicon carbide material in a form of tendrils extending from a surface of the porous graphite substrate into the pores of the porous graphite substrate;
- exposing the porous graphite body to a second mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a second amount of dimethyldichlorosilane;
- and
- depositing, in a second deposition phase, a second silicon carbide coating layer disposed on the first silicon carbide coating layer to form a silicon carbide coated graphite substrate, wherein the first silicon carbide coating layer is characterized by a crystal size that is different than a crystal size of the second silicon carbide coating layer and a density that is different than a density of the second silicon carbide coating layer.
4 more elements
A method of manufacturing a silicon carbide coated graphite body by chemical vapor deposition, comprising:
- providing as a porous graphite body a porous graphite substrate having an open porosity between 6% and less than 12% into a reaction chamber;
- heating the porous graphite substrate in the reaction chamber to a temperature in a range of 1000 to 1200° C. under atmospheric pressure in a presence of a flow of H2 gas;
- exposing the porous graphite body to a first mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a first amount of dimethyldichlorosilane;
- depositing, in a first deposition phase, substantially tetrahedral silicon carbide crystals on the porous graphite substrate to form a first silicon carbide coating layer, wherein the depositing is carried out at a temperature in a range of 1000° C. to 1150° C., and wherein the substantially tetrahedral silicon carbide crystals are formed in pores of the porous graphite substrate in a form of tendrils extending from the first silicon carbide coating layer into the pores of the porous graphite substrate;
- exposing the porous graphite body to a second mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a second amount of dimethyldichlorosilane;
- and
- depositing, in a second deposition phase, a second silicon carbide coating layer disposed on the first silicon carbide coating layer, wherein the first silicon carbide coating layer is characterized by a crystal size that is different than a crystal size of the second silicon carbide coating layer.
4 more elements
A method of manufacturing a silicon carbide coated graphite body by chemical vapor deposition, comprising:
- providing as a porous graphite body a porous graphite substrate having an open porosity between 6% and less than 12% into a reaction chamber;
- heating the porous graphite substrate in the reaction chamber to a temperature in a range of 1000 to 1200° C. under atmospheric pressure in a presence of a flow of H2 gas;
- exposing the porous graphite body to a first mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a first amount of dimethyldichlorosilane;
- depositing, in a first deposition phase, a substantially stoichiometric silicon carbide, having a Si:C ratio of 1:1, with substantially tetrahedral silicon carbide crystals on the porous graphite substrate to form a first silicon carbide coating layer, wherein the substantially tetrahedral silicon carbide crystals are formed on an outer surface of the porous graphite substrate and in pores of the porous graphite substrate to form a crystalline silicon carbide material in a form of tendrils extending from a surface of the porous graphite substrate into the pores of the porous graphite substrate;
- exposing the porous graphite body to a second mixture of dimethyldichlorosilane and gaseous H2, the mixture comprising a second amount of dimethyldichlorosilane;
- depositing, in a second deposition phase, a second silicon carbide coating layer disposed on the first silicon carbide coating layer, wherein the first silicon carbide coating layer is characterized by a density that is different than a density of the second silicon carbide coating layer;
- and
- modifying the surface porosity of the porous graphite substrate, wherein modifying the surface porosity increases a surface pore diameter between 60 to 100%.
5 more elements
Dependencies are inferred from the claim text.