Method for producing a silicon carbide substrate
OwnerHugo Biard, Sidoine Odoul +1inventors
InventorsHugo Biard, Sidoine Odoul, Christophe Maleville
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Abstract
A method for producing a substrate comprising a polycrystalline silicon carbide layer and a monocrystalline silicon carbide layer in direct contact with the polycrystalline silicon carbide layer, the method successively comprising the following steps of: —transferring a first monocrystalline silicon carbide layer onto a front face of a graphite temporary support substrate, —depositing polycrystalline silicon carbide on the first monocrystalline silicon carbide layer to form the polycrystalline silicon carbide layer, and —removing the graphite temporary support substrate.
Claims19
A method of manufacturing a substrate comprising a layer of polycrystalline silicon carbide and a layer of single-crystal silicon carbide in direct contact with the layer of polycrystalline silicon carbide, the method comprising the following successive steps:
- transferring a first layer of single-crystal silicon carbide onto a front face of a graphite temporary support substrate;
- depositing polycrystalline silicon carbide onto the first layer of single-crystal silicon carbide to form the polycrystalline silicon carbide layer;
- and
- removing the graphite temporary support substrate.
An intermediate substrate, comprising:
- a graphite temporary support substrate;
- a first layer of single-crystal silicon carbide on a front face of the graphite temporary support substrate;
- and
- a first layer of polycrystalline silicon carbide in direct contact with the first layer of single-crystal silicon carbide.
Dependencies are inferred from the claim text.