Etching of silicon carbide accretions from reactor parts
AssigneesLpe S.P.A., ASM IP Holding B.V.
InventorsGianluca Valente, Steven Reiter, Alexandros Demos, Marco Mauceri
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Abstract
The present invention relates to a method for etching a silicon carbide accretion from one or more workpieces of a reaction chamber for the deposition of silicon carbide layers on a substrate. The method comprises the steps of: (i) providing a silicon carbide accretion on one or more workpieces of a reaction chamber of a reactor for deposition silicon carbide; (ii) executing at least one cycle of an etching process; (iii) executing at least one cycle of a chemical vapor deposition process. The present invention further relates to a reactor adapted to execute said method.
Claims19
A method for etching a silicon carbide accretion from one or more workpieces of a reaction chamber of a reactor for the deposition of silicon carbide layers on a substrate, the method comprising the steps of:
- (i) providing a silicon carbide accretion on the one or more workpieces, said silicon carbide accretion comprising silicon carbide in polycrystalline and/or amorphous form;
- (ii) executing at least one cycle of an etching process comprising the steps of:
- A1. adjusting the temperature of the reaction chamber to 800-1450° C;
- A2. adjusting the pressure of the reaction chamber to 100-700 mbar;
- B. delivering a reactive composition into the reaction chamber;
- said reactive composition comprising at least a first reactive gas and a carrier gas;
- (iii) executing at least one cycle of a chemical vapor deposition process in the reaction chamber, comprising the step of:
- D. depositing a ceramic overlayer onto the one or more workpieces;
- wherein the carrier gas in step B is an inert gas;
- and wherein said first reactive gas is an inorganic chlorinated species;
- and wherein the molar concentration of the first reactive gas into the carrier gas is 15-40%.
Dependencies are inferred from the claim text.