C23C 14/345
Using substrate bias
Official title: {using substrate bias}
C23C14/345 (Using substrate bias) appears on 528 US grants and 626 published applications in this corpus.
Search patents in C23C- Granted patents
- 528
- Published applications
- 626
- Assignees
- 247
- Inventors
- 1,311
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 5 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 7 | 0 |
| 1999 | 7 | 0 |
| 2000 | 12 | 0 |
| 2001 | 17 | 6 |
| 2002 | 21 | 10 |
| 2003 | 9 | 18 |
| 2004 | 19 | 20 |
| 2005 | 13 | 13 |
| 2006 | 3 | 20 |
| 2007 | 7 | 21 |
| 2008 | 9 | 15 |
| 2009 | 6 | 26 |
| 2010 | 11 | 17 |
| 2011 | 8 | 22 |
| 2012 | 5 | 46 |
| 2013 | 29 | 30 |
| 2014 | 33 | 29 |
| 2015 | 26 | 20 |
| 2016 | 18 | 19 |
| 2017 | 12 | 29 |
| 2018 | 16 | 18 |
| 2019 | 21 | 27 |
| 2020 | 21 | 28 |
| 2021 | 21 | 32 |
| 2022 | 24 | 41 |
| 2023 | 29 | 38 |
| 2024 | 34 | 38 |
| 2025 | 38 | 25 |
| 2026 | 13 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of operating a PVD apparatus22 Sep 2026US 12,745,577 B2SPTS Technologies Limited
- Al-rich AlTiN-based films7 Jul 2026US 12,674,231 B2Oerlikon Surface Solutions AG, PfäFfikon
- Coated tool12 May 2026US 12,623,292 B2MOLDINO Tool Engineering, Ltd.
- Laminated structure21 Apr 2026US 12,610,662 B2Japan Display Inc.
- Coating method for making chip, chip substrate, and chip21 Apr 2026US 12,610,799 B2Tencent Technology (Shenzhen) Company Limited
- Film deposition method20 Aug 2026US 2026/0242927 A1Ulvac, Inc.
- Max-ag electrically conductive composite coating and preparation method thereof6 Aug 2026US 2026/0226606 A1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
- Physical vapor deposition (pvd) having a high deposition rate without compromising film stress mitigation16 Jul 2026US 2026/0201543 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of producing hard mask9 Jul 2026US 2026/0193769 A1Ulvac, Inc.
Most cited
By later US patents
- Step coverage and overhang improvement by pedestal bias voltage modulation330US 5,976,327 AAPPLIED Materials.Inc. · 1999
- Apparatus for depositing material into high aspect ratio holes273US 5,178,739 AInternational Business Machines Corporation · 1993
- Method of and apparatus for sputtering149US 4,999,096 AHitachi, Ltd. · 1991
- System, method and apparatus for controlling ion energy distribution128US 9,287,086 B2Advanced Energy Industries, Inc. · 2016
- Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer121US 6,217,721 B1APPLIED Materials.Inc. · 2001