Apparatus for depositing material into high aspect ratio holes
AssigneeInternational Business Machines Corporation
InventorsMichael S. Barnes, John C. Forster, John H. Keller
Life of this patent
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Abstract
A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.
Claims24
An apparatus for depositing a material onto a substrate in a vacuum chamber comprising:
- sputtering means for providing a sputtering source of the material;
- magnetic means for providing a multidipole magnetic field for magnetic confinement of plasma electrons;
- rf energy transmission means disposed in the vacuum chamber for inductively coupling rf electrical energy into the vacuum chamber directly for producing a plasma of sufficient density and volume in the vacuum chamber to cause ionization of sputtered atoms;
- and
- substrate placement means for placing the substrate in contract with said plasma.
An apparatus for depositing a material onto a substrate in a vacuum chamber comprising:
- a first sputter target;
- first sputter power source means for providing electrical energy to said first sputter target for causing sputtering thereof;
- first magnet means for providing a multidipole magnetic field for magnetic confinement of plasma electrons in close proximity to the sputtering surface of said first sputter target;
- a hollow, cylindrical, second sputter target disposed between said first sputter target and the substrate;
- second sputter power source means for providing electrical energy to said second sputter target for causing sputtering thereof;
- second magnet means for providing a multidipole magnetic field for magnetic confinement of plasma electrons in close proximity to the sputtering surface of said second sputter target;
- rf coil means disposed in the vacuum chamber for inductively coupling rf energy into the vacuum chamber directly for producing a plasma of sufficient density and volume to cause ionization of sputtered atoms therein;
- rf power source means for providing rf energy to said rf coil means;
- bias means for providing electrical bias to the substrate for controlling the direction and energy of ions impinging thereon;
- and
- substrate placement means for placing the substrate in contact with said plasma.
An apparatus for depositing a material onto a substrate in a vacuum chamber comprising:
- an rf coil disposed in the vacuum chamber and composed at least partly of the material;
- sputter power source means for providing electrical energy to said rf coil to cause sputtering of the material therefrom;
- magnet means for providing a multidipole magnetic field for confinement of plasma electrons in close proximity to said rf coil;
- rf power source for providing rf power to said rf coil to cause said rf coil to inductively couple rf energy into the vacuum chamber for producing a plasma of sufficient density and volume to cause ionization of sputtered atoms;
- decoupling means to decouple said sputter power source means from said rf power source means;
- bias means for providing electrical bias to the substrate for controlling the direction and energy of ions impinging thereon;
- and
- substrate placement means for placing the substrate in contact with said plasma.
An apparatus for depositing a material onto a substrate in a vacuum chamber comprising:
- a first sputter target;
- first sputter power source means for providing electrical energy to said first sputter target for causing sputtering thereof;
- first magnet means for providing a multidipole magnetic field for confining plasma electrons in close proximity to the sputtering surface of said first sputter target;
- a plurality of ring sputter targets disposed between said first sputter target and the substrate;
- second sputter power source means for providing electrical energy to said ring sputter targets for causing sputtering thereof;
- a plurality of ring magnet means disposed adjacent to said ring sputter targets for providing a multidipole magnetic field for confining plasma electrons in close proximity to the sputtering surface of said ring sputter targets;
- rf coil means disposed in the vacuum chamber for inductively coupling rf energy into the vacuum chamber directly for producing a plasma of sufficient density and volume to cause ionization of sputtered atoms;
- rf power source means for providing rf energy to said rf coil means;
- bias means for providing electrical bias to the substrate for controlling the direction and energy of ions impinging thereon;
- and
- substrate placement means for placing the substrate in contact with said plasma.
An apparatus for producing a plasma in a vacuum chamber comprising:
- rf power source means for providing rf energy;
- hollow rf coil means for inductively coupling said rf energy into the vacuum chamber;
- and
- a plurality of magnets disposed within said rf coil means for confining plasma away from said rf coil means.
A method of depositing a material upon a substrate in a vacuum chamber comprising the steps of:
- sputtering the material off of at least one target with magnetron discharge;
- inductively coupling rf electrical energy directly into the vacuum chamber using a rf coil disposed in the vacuum chamber in order to cause ionization of said sputtered material;
- confining the plasma whereby produced using a multidipole magnetic field;
- and,
- placing the substrate in contact with said plasma.
A method of depositing a material upon a substrate in a vacuum chamber comprising the steps of:
- sputtering the material off of at least one target with magnetron discharge;
- inductively coupling rf power directly into the vacuum chamber using a rf coil disposed in the vacuum chamber in order to cause ionization of said sputtered material;
- confining the plasma thereby produced using a multidipole magnetic field;
- placing the substrate in contact with said plasma;
- and,
- biasing the substrate to control the energy and directionality of ions impinging on the substrate.
Dependencies are inferred from the claim text.