Method of producing hard mask

A method of producing a hard mask, comprising:

• a first step in which a target is made of tungsten, a rare gas and nitrogen gas are introduced into a processing chamber of a vacuum atmosphere, and a tungsten nitride film is deposited on a surface of a substrate to be treated by a reactive sputtering manner;
• and
• a second step in which a target is made of tungsten, and a tungsten film is deposited on a surface of the tungsten nitride film in a processing chamber of the vacuum atmosphere,
• wherein a flow rate ratio of the rare gas to the nitrogen gas and a pressure in the processing chamber are set to 1.5 or less and 1 Pa or more, respectively, in the first step, a stress is adjusted depending on a film thickness of the tungsten film by controlling at least one of a total pressure in the processing chamber and a bias electric power supplied to the substrate to be treated at the time of deposition in the second step, and whereby a microcrystalline tungsten film of which a grain size is 60 nm or less is deposited over an entire in-plane direction of the substrate to be treated.