Y10S 438/914
Doping
Y10S438/914 (Doping) appears on 823 US grants and 220 published applications in this corpus.
Search patents in Y10S- Granted patents
- 823
- Published applications
- 220
- Assignees
- 284
- Inventors
- 1,346
- Latest grant
- 2 Jul 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 24 | 0 |
| 1977 | 19 | 0 |
| 1978 | 20 | 0 |
| 1979 | 15 | 0 |
| 1980 | 16 | 0 |
| 1981 | 21 | 0 |
| 1982 | 7 | 0 |
| 1983 | 18 | 0 |
| 1984 | 16 | 0 |
| 1985 | 10 | 0 |
| 1986 | 18 | 0 |
| 1987 | 20 | 0 |
| 1988 | 18 | 0 |
| 1989 | 23 | 0 |
| 1990 | 20 | 0 |
| 1991 | 21 | 0 |
| 1992 | 27 | 0 |
| 1993 | 36 | 0 |
| 1994 | 33 | 0 |
| 1995 | 20 | 0 |
| 1996 | 29 | 0 |
| 1997 | 30 | 0 |
| 1998 | 28 | 0 |
| 1999 | 30 | 0 |
| 2000 | 28 | 0 |
| 2001 | 26 | 8 |
| 2002 | 27 | 16 |
| 2003 | 23 | 15 |
| 2004 | 23 | 30 |
| 2005 | 23 | 30 |
| 2006 | 15 | 20 |
| 2007 | 21 | 16 |
| 2008 | 15 | 11 |
| 2009 | 17 | 15 |
| 2010 | 22 | 15 |
| 2011 | 14 | 10 |
| 2012 | 12 | 12 |
| 2013 | 8 | 3 |
| 2014 | 11 | 6 |
| 2015 | 7 | 5 |
| 2016 | 5 | 2 |
| 2017 | 1 | 4 |
| 2018 | 4 | 2 |
| 2019 | 2 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
- Y10S 438/925Fluid growth doping control134
- Y10S 438/919Compensation doping125
- Y10S 438/924To facilitate selective etching123
- Y10S 438/923Diffusion through a layer103
- Y10S 438/918Special or nonstandard dopant99
- Y10S 438/92Controlling diffusion profile by oxidation70
- Y10S 438/917Deep level dopants46
- Y10S 438/916Autodoping control or utilization39
Recent patents
- Microstructure processing method and microstructure processing apparatus2 Jul 2019US 10,336,609 B2Hitachi, Ltd.
- Etch rate modulation through ion implantation25 Jun 2019US 10,332,748 B2Varian Semiconductor Equipment Associates, Inc.
- Atomic layer etching of tungsten and other metals9 Oct 2018US 10,096,487 B2Lam Research Corporation
- Bottom processing10 Jul 2018US 10,020,204 B2APPLIED Materials.Inc.
- Etch rate modulation through ion implantation3 Apr 2018US 9,934,982 B2Varian Semiconductor Equipment Associates, Inc.
- Etch Rate Modulation Through Ion Implantation28 Jun 2018US 2018/0182636 A1Varian Semiconductor Equipment Associates, Inc.
- Method and system for mutliline mir-ir laser21 Jun 2018US 2018/0175579 A1The UAB Research Foundation
- Microstructure processing method and microstructure processing apparatus21 Dec 2017US 2017/0362082 A1Hitachi, Ltd.
- Bottom processing14 Sep 2017US 2017/0263466 A1APPLIED Materials.Inc.
- Etch Rate Modulation Through Ion Implantation22 Jun 2017US 2017/0178914 A1Varian Semiconductor Equipment Associates, Inc.
Most cited
By later US patents
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997
- Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer251US 6,054,370 AIntel Corporation · 2000